FDS8958A
Typical Characteristics: Q1 (N-Channel)
20
16
I
D
, DRAIN CURRENT (A)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
V
GS
= 10.0V
2.2
4.0V
3.5V
6.0V
12
1.8
4.5V
V
GS
= 3.5V
1.4
4.0
4.5V
5.0
6.0V
10.0V
8
3.0V
4
1
0
0
0.5
1
1.5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
2
0.6
0
4
8
12
I
D
, DRAIN CURRENT (A)
16
20
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.08
1.6
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
1.4
R
DS(ON)
, ON-RESISTANCE (OHM)
I
D
= 7A
V
GS
= 10.0V
0.07
0.06
0.05
0.04
0.03
T
A
= 25
o
C
0.02
0.01
T
A
= 125
o
C
I
D
= 3.5A
1.2
1
0.8
0.6
-50
-25
0
25
50
75
100
T
J
, JUNCTION TEMPERATURE (
o
C)
125
150
2
4
6
8
V
GS
, GATE TO SOURCE VOLTAGE (V)
10
Figure 3. On-Resistance Variation with
Temperature.
20
V
DS
= 5V
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
V
GS
= 0V
I
S
, REVERSE DRAIN CURRENT (A)
16
10
1
0.1
0.01
0.001
T
A
= 125
o
C
I
D
, DRAIN CURRENT (A)
12
T
A
= 125
o
C
-55
o
C
25
o
C
25
o
C
-55
o
C
8
4
0
1.5
2
2.5
3
3.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
4
0.0001
0
0.2
0.4
0.6
0.8
1
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS8958A Rev F1 (W)
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
