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FDS8958A_07 参数 Datasheet PDF下载

FDS8958A_07图片预览
型号: FDS8958A_07
PDF下载: 下载PDF文件 查看货源
内容描述: 双N和P沟道PowerTrench MOSFET [Dual N and P-Channel PowerTrench MOSFET]
分类和应用:
文件页数/大小: 9 页 / 307 K
品牌: FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
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FDS8958A
February
2007
FDS8958A
Dual N & P-Channel PowerTrench
®
MOSFET
General Description
These dual N- and P-Channel enhancement mode
power field effect transistors are produced using
Fairchild Semiconductor’s advanced PowerTrench
process that has been especially tailored to minimize
on-state ressitance and yet maintain superior switching
performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
tm
Features
Q1:
N-Channel
R
DS(on)
= 0.028Ω @ V
GS
= 10V
R
DS(on)
= 0.040Ω @ V
GS
= 4.5V
Q2:
P-Channel
R
DS(on)
= 0.052Ω @ V
GS
= -10V
R
DS(on)
= 0.080Ω @ V
GS
= -4.5V
Fast switching speed
High power and handling capability in a widely
used surface mount package
-5A, -30V
7.0A, 30V
D1
D
D1
D
D2
D
D
D2
5
6
G2
S2
G
Q2
4
3
SO-8
Pin 1
SO-8
7
8
Q1
2
1
G1
S1
S
S
S
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
- Continuous
T
A
= 25°C unless otherwise noted
Parameter
Q1
30
(Note 1a)
Q2
30
±20
-5
-20
2
1.6
0.9
13
-55 to +150
Units
V
V
A
W
mJ
°C
±20
7
20
2
1.6
0.9
54
- Pulsed
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
Single Pulse Avalanche Energy
(Note 1a)
(Note 1c)
E
AS
T
J
, T
STG
(Note 3)
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
40
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS8958A
©2007
Fairchild Semiconductor Corporation
FDS8958A
13”
12mm
2500 units
FDS8958A Rev F1(W)