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FDS8958A_07 参数 Datasheet PDF下载

FDS8958A_07图片预览
型号: FDS8958A_07
PDF下载: 下载PDF文件 查看货源
内容描述: 双N和P沟道PowerTrench MOSFET [Dual N and P-Channel PowerTrench MOSFET]
分类和应用:
文件页数/大小: 9 页 / 307 K
品牌: FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
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FDS8958A
Typical Characteristics: Q2 (P-Channel)
30
-5.0V
V
-4.5V
V
-4.0V
10
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
V
GS
= -10V
-I
D
, DRAIN CURRENT (A)
-6.0V
V
2
1.8
1.6
-4.5V
1.4
1.2
1
0.8
0
1
2
3
4
5
6
0
6
12
18
24
30
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-I
D
, DRAIN CURRENT (A)
-5.0V
-6.0V
-7.0V
-8.0V
-10V
V
GS
=-4.0V
20
-3.5V
-3.0V
0
Figure 12. On-Region Characteristics.
Figure 13. On-Resistance Variation with
Drain Current and Gate Voltage.
0.25
R
DS(ON)
, ON-RESISTANCE (OHM)
1.6
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
I
D
= -5A
V
GS
= -10V
I
D
= -2.5A
0.2
1.4
1.2
0.15
T
A
= 125
o
C
0.1
T
A
= 25
o
C
0.05
1
0.8
0.6
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
o
C)
0
2
4
6
8
10
-V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 14. On-Resistance Variation with
Temperature.
15
-I
S
, REVERSE DRAIN CURRENT (A)
Figure 15. On-Resistance Variation with
Gate-to-Source Voltage.
100
V
DS
= -5V
-I
D
, DRAIN CURRENT (A)
12
T
A
= -55
o
C
125
o
C
25 C
o
10
1
0.1
0.01
0.001
0.0001
0
V
GS
=0V
T
A
= 125
o
C
25
o
C
-55
o
C
9
6
3
0
1
1.5
2
2.5
3
3.5
4
4.5
-V
GS
, GATE TO SOURCE VOLTAGE (V)
0.2
0.4
0.6
0.8
1
1.2
1.4
-V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 16. Transfer Characteristics.
Figure 17. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS8958A Rev F1 (W)