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FDS8958A_07 参数 Datasheet PDF下载

FDS8958A_07图片预览
型号: FDS8958A_07
PDF下载: 下载PDF文件 查看货源
内容描述: 双N和P沟道PowerTrench MOSFET [Dual N and P-Channel PowerTrench MOSFET]
分类和应用:
文件页数/大小: 9 页 / 307 K
品牌: FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
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FDS8958A
Electrical Characteristics
Symbol
Parameter
(continued)
T
A
= 25°C unless otherwise noted
Test Conditions
(Note 2)
Type Min
Typ
Max Units
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q1
V
DD
= 15 V, I
D
= 1 A,
V
GS
= 10V, R
GEN
= 6
Q2
V
DD
= -15 V, I
D
= -1 A,
V
GS
= -10V, R
GEN
= 6
Q1
V
DS
= 15 V, I
D
= 7 A, V
GS
= 10 V
Q2
V
DS
= -15 V, I
D
= -5 A,V
GS
= -10 V
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
8
7
5
13
23
14
3
9
10.7
9.6
1.7
2.2
2.1
1.7
16
14
10
24
37
25
6
17
26
13
ns
ns
ns
ns
nC
nC
nC
Drain–Source Diode Characteristics and Maximum Ratings
I
S
V
SD
t
rr
Q
rr
Notes:
1.
R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θJC
is guaranteed by design while R
θCA
is determined by the user' board design.
s
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward
Voltage
Diode Reverse Recovery
Time
Diode Reverse Recovery
Charge
V
GS
= 0 V, I
S
= 1.3 A
V
GS
= 0 V, I
S
= -1.3 A
Q1
I
F
= 7 A, d
iF
/d
t
= 100 A/µs
Q2
I
F
= -5 A, d
iF
/d
t
= 100 A/µs
(Note 2)
(Note 2)
0.75
-0.88
19
19
9
6
1.3
-1.3
1.2
-1.2
A
V
nS
nC
a) 78°/W when
mounted on a
0.5 in
2
pad of 2 oz
copper
b) 125°/W when
2
mounted on a .02 in
pad of 2 oz copper
c) 135°/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3. Starting TJ = 25°C, L = 3mH, I
AS
= 6A, V
DD
= 30V, V
GS
= 10V (Q1).
Starting TJ = 25°C, L = 3mH, I
AS
= 3A, V
DD
= 30V, V
GS
= 10V (Q2).
FDS8958A Rev F1 (W)