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ES29BDS160FB-12TG 参数 Datasheet PDF下载

ES29BDS160FB-12TG图片预览
型号: ES29BDS160FB-12TG
PDF下载: 下载PDF文件 查看货源
内容描述: 16兆( 2M ×8 / 1M ×16 )的CMOS 3.0伏只,引导扇区闪存 [16Mbit(2M x 8/1M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory]
分类和应用: 闪存
文件页数/大小: 54 页 / 708 K
品牌: EXCELSEMI [ EXCEL SEMICONDUCTOR INC. ]
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Excel Semiconductor inc.  
COMMAND DEFINITIONS  
Writing specific address and data commands or  
sequences into the command register initiates  
device operations. Table 9 defines the valid register  
command sequences. Note that writing incorrect  
address and data values or writing them in the  
improper sequence may place the device in an  
unknown state. A reset command is required to  
return the device to normal operation.  
the Device Bus Operations section for more informa-  
tion.The Read-Only Operations table provides the  
read parameters, and Fig. 16 shows the timing dia-  
gram  
RESET COMMAND  
Writing the reset command resets the device to the  
read or erase-suspend-read mode. Address bits are  
don’t cares for this command.  
All addresses are latched on the falling edge of WE#  
or CE#, whichever happens later. All data is latched  
on the rising edge of WE# or CE#, whichever hap-  
pens first. Refer to the AC Characteristics section for  
timing diagrams.  
The reset command may be written between the  
sequence cycles in an erase command sequence  
before erasing begins. This resets the device to  
which the system was writing to the read mode.  
Once erasure begins, however, the device ignores  
reset commands until the operation is complete.  
READING ARRAY DATA  
The device is automatically set to reading array data  
after device power-up. No commands are required  
to retrieve data. The device is ready to read array  
data after completing an Embedded Program or  
Embedded Erase algorithm.  
The reset command may be written between the  
sequence cycles in a program command sequence  
before programming begins. This resets the device  
to which the system was writing to the read mode. If  
the program command sequence is written to a sec-  
tor that is in the Erase Suspend mode, writing the  
reset command returns the device to the erase-sus-  
pend-read mode. Once programming begins, how-  
ever, the device ignores reset commands until the  
operation is complete.  
After the device accepts an Erase Suspend com-  
mand, the device enters the erase-suspend-read  
mode, after which the system can read data from  
any non-erase-suspended sector. After completing a  
programming operation in the Erase Suspend mode,  
the system may once again read array data with the  
same exception. See the Erase Suspend/Erase  
Resume Commands section for more information.  
The reset command may be written between the  
sequence cycles in an autoselect command  
sequence. Once in the autoselect mode, the reset  
command must be written to return to the read  
mode. If the device entered the autoselect mode  
while in the Erase Suspend mode, writing the reset  
command returns the device to the erase-suspend-  
read mode.  
The system must issue the reset command to return  
the device to the read (or erase-suspend-read)  
mode if DQ5 goes high during an active program or  
erase operation, or if the device is in the autoselect  
mode. See the next section, Reset Command, for  
more information.  
If DQ5 goes high during a program or erase opera-  
tion, writing the reset command returns the device to  
the read mode (or erase-suspend-read mode if the  
device was in Erase-Suspend).  
See also Requirements for Reading Array Data in  
18  
Rev. 1C Jan 5 , 2006  
ES29LV160D  
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