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ES29BDS160FB-12TG 参数 Datasheet PDF下载

ES29BDS160FB-12TG图片预览
型号: ES29BDS160FB-12TG
PDF下载: 下载PDF文件 查看货源
内容描述: 16兆( 2M ×8 / 1M ×16 )的CMOS 3.0伏只,引导扇区闪存 [16Mbit(2M x 8/1M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory]
分类和应用: 闪存
文件页数/大小: 54 页 / 708 K
品牌: EXCELSEMI [ EXCEL SEMICONDUCTOR INC. ]
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E S I  
E S I  
Excel Semiconductor inc.  
This device enters the CFI Query mode when the  
system writes the CFI query command, 98h, to  
address 55h in word mode (or address AAh in byte  
mode), any time the device is ready to read array  
data. The system can read CFI information at the  
addresses given in Tables 5-8. To terminate reading  
CFI data, the system must write the reset com-  
mand.The CFI query command can be written to the  
system when the device is in the autoselect mode  
or the erase-suspend-read mode. The device  
enters the CFI query mode, and the system can read  
CFI data at the addresses given in Tables 5-8.  
When the reset command is written, the device  
returns respectively to the read mode or erase-sus-  
pend-read mode.  
Common Flash Memory  
Interface (CFI)  
CFI is supported in the ES29LV160 device. The  
Common Flash Interface (CFI) specification out-  
lines device and host system software interrogation  
handshake, which allows specific vendor-specified  
software algorithms to be used for entire families of  
devices. Software support can then be device-inde-  
pendent, JEDEC ID-independent, and forward- and  
backward-compatible for the specified flash device  
families. Flash vendors can standardize their exist-  
ing interfaces for long-term compatibility.  
Table 5. CFI Query Identification String  
Addresses  
(Word Mode)  
Addresses  
(Byte Mode)  
Data  
Description  
10h  
11h  
12h  
20h  
22h  
24h  
0051h  
0052h  
0059h  
Query Unique ASCII string “QRY”  
13h  
14h  
26h  
28h  
0002h  
0000h  
Primary OEM Command Set  
15h  
16h  
2Ah  
2Ch  
0040h  
0000h  
Address for Primary Extended Table  
17h  
18h  
2Eh  
30h  
0000h  
0000h  
Alternate OEM Command Set(00h = none exists)  
Address for Alternate OEM Extended Table (00h = none exists)  
19h  
1Ah  
32h  
34h  
0000h  
0000h  
Table 6. System Interface String  
Addresses  
(Word Mode)  
Addresses  
(Byte Mode)  
Data  
Description  
Vcc Min. (write/erase)  
D7-D4: volt, D3-D0: 100 millivolt  
1Bh  
1Ch  
36h  
38h  
0027h  
0036h  
Vcc Max. (write/erase)  
D7-D4: volt, D3-D0: 100 millivolt  
1Dh  
1Eh  
1Fh  
3Ah  
3Ch  
3Eh  
0000h  
0000h  
0004h  
Vpp Min. voltage (00h = no Vpp pin present)  
Vpp Max. voltage (00h = no Vpp pin present)  
Typical timeout per single byte/word write 2N us  
Typical timeout for Min. size buffer write 2N us (00h = not supported)  
Typical timeout per individual block erase 2N ms  
20h  
21h  
22h  
23h  
24h  
25h  
26h  
40h  
42h  
44h  
46h  
48h  
4Ah  
4Ch  
0000h  
000Ah  
0000h  
0005h  
0000h  
0004h  
0000h  
Typical timeout for full chip erase 2N ms (00h = not supported)  
Max. timeout for byte/word write 2N times typical  
Max. timeout for buffer write 2N times typical  
Max. timeout per individual block erase 2N times typical  
Max. timeout for full chip erase 2N times typical (00h = not supported)  
15  
Rev. 1C Jan 5 , 2006  
ES29LV160D  
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