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ES29BDS160FB-12TG 参数 Datasheet PDF下载

ES29BDS160FB-12TG图片预览
型号: ES29BDS160FB-12TG
PDF下载: 下载PDF文件 查看货源
内容描述: 16兆( 2M ×8 / 1M ×16 )的CMOS 3.0伏只,引导扇区闪存 [16Mbit(2M x 8/1M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory]
分类和应用: 闪存
文件页数/大小: 54 页 / 708 K
品牌: EXCELSEMI [ EXCEL SEMICONDUCTOR INC. ]
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E S I  
E S I  
Excel Semiconductor inc.  
A9 High-Voltage Method  
Start  
Note: All sectors must be  
previously protected.  
Start  
COUNT = 1  
COUNT = 1  
SET A9=OE#=V  
ID  
SET A9=OE#=V  
ID  
,
CE#, A0=V  
Set Sector Address  
A<19 :12>  
IL  
RESET#,  
A6, A1=V  
CE#, A6, A0=V  
IL  
IH  
RESET#, A1=V  
IH  
SET WE# = V  
Wait 15ms  
IL  
SET WE# = V  
Wait 150 us  
IL  
SET WE# = V  
IH  
SET WE# = V  
IH  
Increase COUNT  
Increase COUNT  
CE#,OE#, A0=V  
IL  
RESET#, A6, A1=V  
IH  
CE#,OE#,A6,A0=V  
IL  
RESET#, A1 = V  
IH  
Set Sector AddressA<19 :12>  
Read Data  
Read Data  
No  
No  
No  
COUNT= 25?  
Data = 01h?  
Yes  
No  
COUNT=1000?  
Data = 00h?  
Yes  
Increase Sector  
Address  
Yes  
Yes  
Device failed  
Yes  
Protect Another  
Sector ?  
Device failed  
No  
The Last Sector  
Address ?  
No  
Remove V from  
ID  
A9 and Write  
Yes  
Reset Command  
Remove V from A9 and  
ID  
Write Reset Command  
Sector Protection  
Complete  
Sector Unprotection  
Complete  
Figure 4. Sector Protection Algorithm  
(A9 High-Voltage Method)  
Figure 5. Sector Un-Protection Algorithm  
(A9 High-Voltage Method)  
14  
Rev. 1C Jan 5 , 2006  
ES29LV160D  
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