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ES29BDS160FB-12TG 参数 Datasheet PDF下载

ES29BDS160FB-12TG图片预览
型号: ES29BDS160FB-12TG
PDF下载: 下载PDF文件 查看货源
内容描述: 16兆( 2M ×8 / 1M ×16 )的CMOS 3.0伏只,引导扇区闪存 [16Mbit(2M x 8/1M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory]
分类和应用: 闪存
文件页数/大小: 54 页 / 708 K
品牌: EXCELSEMI [ EXCEL SEMICONDUCTOR INC. ]
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E S I  
E S I  
Excel Semiconductor inc.  
Command Definitions  
Table 9. ES29LV160 Command Definitions  
Bus Cycles (Notes 2~5)  
Fourth  
Command  
Sequence  
(Note 1)  
First  
Addr  
RA  
Second  
Addr  
Third  
Addr  
Fifth  
Addr  
Sixth  
Data  
RD  
F0  
Data  
Data  
Addr  
Data  
Data  
Addr  
Data  
Read (Note 6)  
Reset (Note 7)  
1
1
XXX  
555  
Word  
Byte  
Word  
Byte  
Word  
Byte  
Word  
Byte  
Word  
Byte  
Word  
Byte  
2AA  
555  
2AA  
555  
2AA  
555  
2AA  
555  
2AA  
555  
2AA  
555  
PA  
555  
AAA  
555  
AAA  
555  
AAA  
555  
AAA  
555  
AAA  
555  
AAA  
Manufacturer ID  
Device ID (Top)  
Device ID (Bottom)  
4
4
4
4
4
3
AA  
AA  
AA  
AA  
AA  
AA  
55  
55  
55  
55  
55  
55  
90  
90  
90  
90  
A0  
20  
X00  
4A  
AAA  
555  
X01  
C4  
AAA  
555  
X02  
X01  
49  
AAA  
555  
X02  
(SA)X02  
(SA)X04  
Sector Protect Verify  
(Note 9)  
00/01  
PD  
AAA  
555  
Program  
PA  
AAA  
555  
Unlock Bypass  
AAA  
XXX  
XXX  
555  
Unlock Bypass Program (Note 10)  
Unlock Bypass Reset (Note 11)  
2
2
A0  
90  
PD  
00  
XXX  
2AA  
555  
2AA  
555  
Word  
Byte  
Word  
Byte  
555  
AAA  
555  
AAA  
555  
AAA  
555  
2AA  
555  
2AA  
555  
555  
Chip Erase  
6
6
AA  
AA  
55  
55  
80  
80  
AA  
AA  
55  
55  
10  
30  
AAA  
555  
AAA  
Sector Erase  
SA  
AAA  
XXX  
XXX  
55  
AAA  
Erase Suspend (Note 12)  
Erase Resume (Note 13)  
1
1
B0  
30  
Word  
Byte  
CFI Query (Note 14)  
1
98  
AA  
Legend:  
PD = Data to be programmed at location PA. Data latches on the  
rising edge of WE# or CE# pulse, whichever happens first.  
SA = Address of the sector to be verified (in autoselect mode) or  
erased. Address bits A19-A12 uniquely select any sector.  
X = Don’t care  
RA = Address of the memory location to be read.  
RD = Data read from location RA during read operation  
PA = Address of the memory location to be programmed.  
Addresses latch on the falling edge of the WE# or CE# pulse,  
whichever happens later.  
Notes:  
9. The data is 00h for an unprotected sector and 01h for a  
protected sector.  
10. The Unlock Bypass command is required prior to the Unlock-  
Bypass Program command.  
11. The Unlock Bypass Reset command is required to return  
to the read mode when the device is in the unlock bypass  
mode.  
12. The system may read and program in non-erasing sectors,  
or enter the autoselect mode, when in the Erase Suspend  
mode. The Erase Suspend command is valid only during  
a sector erase operation.  
1. See Table 1 for description of bus operations.  
2. All values are in hexadecimal.  
3. Except for the read cycle and the fourth cycle of the autoselect  
command sequence, all bus cycles are write cycles.  
4. Data bits DQ15-DQ8 are don’t care in command sequences,  
except for RD and PD  
5. Unless otherwise noted, address bits A19-A11 are don’t cares.  
6. No unlock or command cycles required when device is in  
read mode.  
7. The Reset command is required to return to the read mode  
(or to the erase-suspend-read mode if previously in Erase  
Suspend) when a device is in the autoselect mode, or if DQ5  
goes high (while the device is providing status information).  
8. The fourth cycle of the autoselect command sequence  
is a read cycle. Data bits DQ15-DQ8 are don’t care. See the  
Autoselect Command Sequence section for more information.  
13. The Erase Resume command is valid only during the Erase  
Suspend mode.  
14. Command is valid when device is ready to read array data  
or when device is in autoselect mode.  
19  
Rev. 1C Jan 5 , 2006  
ES29LV160D  
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