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ES29DS800E-90RTG 参数 Datasheet PDF下载

ES29DS800E-90RTG图片预览
型号: ES29DS800E-90RTG
PDF下载: 下载PDF文件 查看货源
内容描述: 的8Mbit ( 1M ×8 / 512K ×16 )的CMOS 3.0伏只,引导扇区闪存 [8Mbit(1M x 8/512K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory]
分类和应用: 闪存
文件页数/大小: 50 页 / 680 K
品牌: EXCELSEMI [ EXCEL SEMICONDUCTOR INC. ]
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E S I  
E S I  
Excel Semiconductor inc.  
AC CHARACTERISTICS  
Table 12. Erase and Program Operations  
Parameter  
Description  
70  
90  
120  
Unit  
JEDEC  
tAVAV  
Std.  
tWC  
Write Cycle Time (Note 1)  
Min  
Min  
Min  
Min  
Min  
Min  
Min  
Min  
Min  
Min  
Min  
Min  
Min  
Min  
70  
90  
120  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
tAVWL  
tAS  
Address Setup Time  
0
tASO  
tAH  
tAHT  
tDS  
Address Setup Time to OE# low during toggle bit polling  
Address Hold Time  
15  
45  
tWLAX  
45  
35  
50  
50  
Address Hold Time From CE# or OE# high during toggle bit polling  
Data Setup Time  
0
tDVWH  
tWHDX  
45  
tDH  
Data Hold Time  
0
tOEPH  
tGHWL  
tCS  
Output Enable High during toggle bit polling  
Read Recovery Time Before Write (OE# High to WE# Low)  
CE# Setup Time  
20  
0
tGHWL  
tELWL  
0
tWHEH  
tWLWH  
tWHDL  
tCH  
CE# Hold Time  
0
tWP  
Write Pulse Width  
35  
35  
50  
tWPH  
tSR/W  
Write Pulse Width High  
30  
0
Latency Between Read and Write Operations  
Byte  
Typ  
Typ  
Typ  
6
8
tWHWH1  
tWHWH2  
tWHWH1  
Programming Operation (Note 2)  
Word  
us  
tWHWH2  
tVCS  
Sector Erase Operation (Note 2)  
Vcc Setup Time (Note 1)  
0.7  
sec  
us  
Min  
Min  
Max  
50  
0
tRB  
Write Recovery Time from RY/BY#  
Program/Erase Valid to RY/BY# Delay  
ns  
tBUSY  
90  
ns  
Notes:  
1. Not 100% tested.  
2. See the “Erase And Programming Performance” section for more information.  
33  
Rev. 1D January 5, 2006  
ES29LV800D  
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