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EM638165TS-7IG 参数 Datasheet PDF下载

EM638165TS-7IG图片预览
型号: EM638165TS-7IG
PDF下载: 下载PDF文件 查看货源
内容描述: [4M x 16 bit Synchronous DRAM (SDRAM)]
分类和应用: 动态存储器光电二极管内存集成电路
文件页数/大小: 53 页 / 517 K
品牌: ETRON [ ETRON TECHNOLOGY, INC. ]
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EM638165  
EtronTech  
Table 15. D.C. Characteristics  
(VDD = 3.3V ± 0.3V, TA = -40~85°C)  
-5I  
-6I  
Max.  
-7I  
Description/Test condition  
Symbol  
Unit Note  
Operating Current  
tRC tRC(min), Outputs Open  
One bank active  
Precharge Standby Current in non-power down mode  
tCK = 15ns, CS# VIH(min), CKE VIH  
Input signals are changed every 2clks  
Precharge Standby Current in non-power down mode  
tCK = , CLK VIL(max), CKE VIH  
3
55  
20  
50  
20  
45  
IDD1  
IDD2N  
20  
12  
2
12  
2
12  
2
IDD2NS  
IDD2P  
Precharge Standby Current in power down mode  
tCK = 15ns, CKE VIL(max)  
Precharge Standby Current in power down mode  
tCK = , CKE VIL(max)  
2
2
2
IDD2PS  
mA  
Active Standby Current in non-power down mode  
tCK = 15ns, CKE VIH(min), CS# VIH(min)  
Input signals are changed every 2clks  
Active Standby Current in non-power down mode  
CKE VIH(min), CLK VIL(max), tCK = ∞  
Operating Current (Burst mode)  
tCK =tCK(min), Outputs Open, Multi-bank interleave  
Refresh Current  
tRC tRC(min)  
30  
30  
30  
25  
IDD3N  
25  
80  
65  
25  
75  
60  
IDD3NS  
IDD4  
70  
55  
3, 4  
3
IDD5  
Self Refresh Current  
CKE 0.2V ; for other inputs VIH VDD - 0.2V, VIL 0.2V  
2
2
2
IDD6  
Rev. 5.2  
18  
Rev. 5.2  
Dec. /2013  
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