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EM636165-XXI 参数 Datasheet PDF下载

EM636165-XXI图片预览
型号: EM636165-XXI
PDF下载: 下载PDF文件 查看货源
内容描述: 1Mega ×16同步DRAM (SDRAM)的 [1Mega x 16 Synchronous DRAM (SDRAM)]
分类和应用: 动态存储器
文件页数/大小: 73 页 / 756 K
品牌: ETRON [ ETRON TECHNOLOGY, INC. ]
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EtronTech  
EM636165-XXI  
1M x 16 SDRAM  
T0  
T1  
T2  
T3  
T4  
T5  
T6  
T7  
T8  
CLK  
1 Clk Interval  
DQM  
BANKA  
ACTIVATE  
COMMAND  
NOP  
NOP  
NOP  
READ A  
WRITE A  
NOP  
DIN A  
DIN A  
NOP  
NOP  
DIN  
CAS# latency=1  
DIN  
DIN  
A
A
DIN  
DIN  
A
A
A
A
0
0
1
1
2
2
3
3
t
, DQ's  
CK1  
Must be Hi-Z before  
the Write Command  
CAS# latency=2  
DIN  
t
, DQ's  
CK2  
: "H" or "L"  
Read to Write Interval  
(Burst Length 4, CAS# Latency = 1, 2)  
T0  
T1  
T2  
T3  
T4  
T5  
T6  
T7  
T8  
CLK  
DQM  
COMMAND  
NOP  
NOP  
NOP  
WRITE B  
DIN B  
NOP  
NOP  
NOP  
NOP  
READ A  
CAS# latency=1  
DOUT A  
DIN B  
DIN B  
DIN B  
0
0
0
1
2
3
t
, DQ's  
CK1  
Must be Hi-Z before  
the Write Command  
CAS# latency=2  
, DQ's  
DIN B  
DIN B  
1
DIN B  
DIN B  
t
2
3
CK2  
: "H" or "L"  
Read to Write Interval  
(Burst Length 4, CAS# Latency = 1, 2)  
A read burst without the auto precharge function may be interrupted by a BankPrecharge/  
PrechargeAll command to the same bank. The following figure shows the optimum time that  
BankPrecharge/ PrechargeAll command is issued in different CAS# latency.  
T0  
T1  
T2  
T3  
T4  
T5  
T6  
T7  
T8  
CLK  
Bank,  
Col A  
Bank,  
Row  
ADDRESS  
Bank(s)  
tRP  
COMMAND  
READ A  
NOP  
NOP  
NOP  
NOP  
NOP  
Precharge  
DOUT A  
NOP  
Activate  
CAS# latency=1  
DOUT A  
DOUT A  
2
DOUT A  
DOUT A  
0
1
3
t
, DQ's  
CK1  
CAS# latency=2  
, DQ's  
DOUT A  
2
DOUT A  
DOUT A  
0
1
3
t
CK2  
CAS# latency=3  
, DQ's  
DOUT A  
DOUT A  
2
DOUT A  
DOUT A  
0
1
3
t
CK3  
Read to Precharge  
(CAS# Latency = 1, 2, 3)  
Preliminary  
8
Rev. 1.1 Apr. 2005  
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