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EM636165-XXI 参数 Datasheet PDF下载

EM636165-XXI图片预览
型号: EM636165-XXI
PDF下载: 下载PDF文件 查看货源
内容描述: 1Mega ×16同步DRAM (SDRAM)的 [1Mega x 16 Synchronous DRAM (SDRAM)]
分类和应用: 动态存储器
文件页数/大小: 73 页 / 756 K
品牌: ETRON [ ETRON TECHNOLOGY, INC. ]
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EtronTech  
EM636165-XXI  
LDQM and UDQM are byte specific, nonpersistent  
1M x 16 SDRAM  
LDQM,  
Input  
Data Input/Output Mask:  
I/O buffer controls. The I/O buffers are placed in a high-z state when  
LDQM/UDQM is sampled HIGH. Input data is masked when LDQM/UDQM is  
sampled HIGH during a write cycle. Output data is masked (two-clock latency)  
when LDQM/UDQM is sampled HIGH during a read cycle. UDQM masks DQ15-  
DQ8, and LDQM masks DQ7-DQ0.  
UDQM  
DQ0-DQ15 Input/Output  
Data I/O:  
The DQ0-15 input and output data are synchronized with the positive  
edges of CLK. The I/Os are byte-maskable during Reads and Writes.  
NC  
-
No Connect:  
These pins should be left unconnected.  
VDDQ  
Supply  
DQ Power:  
Provide isolated power to DQs for improved noise immunity.  
( 3.3V 0.3V )  
±
VSSQ  
Supply  
DQ Ground:  
Provide isolated ground to DQs for improved noise immunity.  
( 0 V )  
VDD  
VSS  
Supply  
Supply  
Power Supply:  
Ground  
+3.3V 0.3V  
±
Preliminary  
4
Rev. 1.1 Apr. 2005  
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