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EM636165-XXI 参数 Datasheet PDF下载

EM636165-XXI图片预览
型号: EM636165-XXI
PDF下载: 下载PDF文件 查看货源
内容描述: 1Mega ×16同步DRAM (SDRAM)的 [1Mega x 16 Synchronous DRAM (SDRAM)]
分类和应用: 动态存储器
文件页数/大小: 73 页 / 756 K
品牌: ETRON [ ETRON TECHNOLOGY, INC. ]
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EtronTech  
EM636165-XXI  
1M x 16 SDRAM  
Pin Descriptions  
Table 1. Pin Details of EM636165  
Description  
Symbol  
Type  
CLK  
Input  
Clock:  
CLK is driven by the system clock. All SDRAM input signals are  
sampled on the positive edge of CLK. CLK also increments the internal burst  
counter and controls the output registers.  
CKE  
Input  
Clock Enable:  
CKE activates(HIGH) and deactivates(LOW) the CLK signal. If  
CKE goes low synchronously with clock(set-up and hold time same as other  
inputs), the internal clock is suspended from the next clock cycle and the state  
of output and burst address is frozen as long as the CKE remains low. When  
both banks are in the idle state, deactivating the clock controls the entry to the  
Power Down and Self Refresh modes. CKE is synchronous except after the  
device enters Power Down and Self Refresh modes, where CKE becomes  
asynchronous until exiting the same mode. The input buffers, including CLK,  
are disabled during Power Down and Self Refresh modes, providing low  
standby power.  
A11  
Input  
Input  
Bank Select:  
A11(BS) defines to which bank the BankActivate, Read, Write, or  
BankPrecharge command is being applied.  
A0-A10  
Address Inputs:  
A0-A10 are sampled during the BankActivate command (row  
address A0-A10) and Read/Write command (column address A0-A7 with A10  
defining Auto Precharge) to select one location out of the 256K available in the  
respective bank. During a Precharge command, A10 is sampled to determine if  
both banks are to be precharged (A10 = HIGH). The address inputs also provide  
the op-code during a Mode Register Set command.  
CS#  
Input  
Input  
Chip Select:  
CS# enables (sampled LOW) and disables (sampled HIGH) the  
command decoder. All commands are masked when CS# is sampled HIGH.  
CS# provides for external bank selection on systems with multiple banks. It is  
considered part of the command code.  
RAS#  
Row Address Strobe:  
The RAS# signal defines the operation commands in  
conjunction with the CAS# and WE# signals and is latched at the positive edges  
of CLK. When RAS# and CS# are asserted "LOW" and CAS# is asserted  
"HIGH," either the BankActivate command or the Precharge command is  
selected by the WE# signal. When the WE# is asserted "HIGH," the  
BankActivate command is selected and the bank designated by BS is turned on  
to the active state. When the WE# is asserted "LOW," the Precharge command  
is selected and the bank designated by BS is switched to the idle state after the  
precharge operation.  
CAS#  
WE#  
Input  
Input  
Column Address Strobe:  
The CAS# signal defines the operation commands in  
conjunction with the RAS# and WE# signals and is latched at the positive edges  
of CLK. When RAS# is held "HIGH" and CS# is asserted "LOW," the column  
access is started by asserting CAS# "LOW." Then, the Read or Write command  
is selected by asserting WE# "LOW" or "HIGH."  
Write Enable:  
The WE# signal defines the operation commands in conjunction  
with the RAS# and CAS# signals and is latched at the positive edges of CLK.  
The WE# input is used to select the BankActivate or Precharge command and  
Read or Write command.  
Preliminary  
3
Rev. 1.1 Apr. 2005  
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