EtronTech
EM636165-XXI
1M x 16 SDRAM
Recommended D.C. Operating Conditions (VDD = 3.3V ± 0.3V)
Industrial Operating temperature : Ta = -40~85 C
°
-6I(G)/7I(G)/8I(G)/10I(G)
Max.
Description/Test condition
Operating Current
Symbol
Unit
Note
1 bank
operation
115/100/95/85
3
tRC ³ tRC(min), Outputs Open, Input
signal one transition per one cycle
IDD1
Precharge Standby Current in non-power down mode
tCK = tCK(min), CS# ³ VIH, CKE = VIH
Input signals are changed once during 30ns.
Precharge Standby Current in power down mode
tCK = tCK(min), CKE £ VIL(max)
3
3
90/85/75/60
IDD2N
IDD2P
2
2
Precharge Standby Current in power down mode
IDD2PS
,
tCK = ¥ CKE £ VIL(max)
mA
Active Standby Current in power down mode
CKE £ VIL(max), tCK = tCK(min)
Active Standby Current in non-power down mode
CKE ³ VIL(max), tCK = tCK(min)
Operating Current (Burst mode)
tCK=tCK(min), Outputs Open, Multi-bank interleave,gapless
data
2
3
IDD3P
IDD3N
90/80/70/55
150/140/130/115
3, 4
3
IDD4
Refresh Current
100/90/90/80
2
IDD5
IDD6
tRC ³ tRC(min)
Self Refresh Current
VIH ³ VDD - 0.2, 0V £ VIL £ 0.2V
Parameter
Description
Min.
Max.
Unit Note
IIL
Input Leakage Current
( 0V £ VIN £ VDD, All other pins not under test = 0V )
- 10
10
mA
IOL
VOH
VOL
Output Leakage Current
Output disable, 0V £ VOUT £ VDDQ
- 10
2.4
-
10
-
mA
V
)
LVTTL Output "H" Level Voltage
( IOUT = -2mA )
LVTTL Output "L" Level Voltage
( IOUT = 2mA )
0.4
V
Preliminary
18
Rev. 1.1 Apr. 2005