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EM636165-XXI 参数 Datasheet PDF下载

EM636165-XXI图片预览
型号: EM636165-XXI
PDF下载: 下载PDF文件 查看货源
内容描述: 1Mega ×16同步DRAM (SDRAM)的 [1Mega x 16 Synchronous DRAM (SDRAM)]
分类和应用: 动态存储器
文件页数/大小: 73 页 / 756 K
品牌: ETRON [ ETRON TECHNOLOGY, INC. ]
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EtronTech  
EM636165-XXI  
1M x 16 SDRAM  
Recommended D.C. Operating Conditions (VDD = 3.3V ± 0.3V)  
Industrial Operating temperature : Ta = -40~85 C  
°
-6I(G)/7I(G)/8I(G)/10I(G)  
Max.  
Description/Test condition  
Operating Current  
Symbol  
Unit  
Note  
1 bank  
operation  
115/100/95/85  
3
tRC ³ tRC(min), Outputs Open, Input  
signal one transition per one cycle  
IDD1  
Precharge Standby Current in non-power down mode  
tCK = tCK(min), CS# ³ VIH, CKE = VIH  
Input signals are changed once during 30ns.  
Precharge Standby Current in power down mode  
tCK = tCK(min), CKE £ VIL(max)  
3
3
90/85/75/60  
IDD2N  
IDD2P  
2
2
Precharge Standby Current in power down mode  
IDD2PS  
,
tCK = ¥ CKE £ VIL(max)  
mA  
Active Standby Current in power down mode  
CKE £ VIL(max), tCK = tCK(min)  
Active Standby Current in non-power down mode  
CKE ³ VIL(max), tCK = tCK(min)  
Operating Current (Burst mode)  
tCK=tCK(min), Outputs Open, Multi-bank interleave,gapless  
data  
2
3
IDD3P  
IDD3N  
90/80/70/55  
150/140/130/115  
3, 4  
3
IDD4  
Refresh Current  
100/90/90/80  
2
IDD5  
IDD6  
tRC ³ tRC(min)  
Self Refresh Current  
VIH ³ VDD - 0.2, 0V £ VIL £ 0.2V  
Parameter  
Description  
Min.  
Max.  
Unit Note  
IIL  
Input Leakage Current  
( 0V £ VIN £ VDD, All other pins not under test = 0V )  
- 10  
10  
mA  
IOL  
VOH  
VOL  
Output Leakage Current  
Output disable, 0V £ VOUT £ VDDQ  
- 10  
2.4  
10  
mA  
V
)
LVTTL Output "H" Level Voltage  
( IOUT = -2mA )  
LVTTL Output "L" Level Voltage  
( IOUT = 2mA )  
0.4  
V
Preliminary  
18  
Rev. 1.1 Apr. 2005  
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