ESMT
M52D32162A
DC CHARACTERISTICS
°C
°C
)
(Recommended operating condition unless otherwise noted, TA = 0
~ 70
Version
Parameter
Symbol
Test Condition
Unit Note
-7
-10
Burst Length = 1
tRC ≥ tRC (min), tCC ≥ tCC (min), IOL= 0mA
Operating Current
(One Bank Active)
ICC1
55
35
mA
1
Precharge Standby
Current in power-down
mode
ICC2P
0.3
0.2
CKE ≤ VIL(max), tCC =15ns
mA
mA
ICC2PS
CKE ≤ VIL(max), CLK ≤ VIL(max), tCC = ∞
CKE ≥ VIH(min), CS ≥ VIH(min), tCC =15ns
ICC2N
3
1
mA
mA
Precharge Standby
Current in non
power-down mode
Input signals are changed one time during 30ns
CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞
Input signals are stable
ICC2NS
ICC3P
1.5
1
CKE ≤ VIL(max), tCC =15ns
Active Standby Current
in power-down mode
mA
mA
ICC3PS
CKE ≤ VIL(max), CLK ≤ VIL(max), tCC = ∞
CKE ≥ VIH(min), CS ≥ VIH(min), tCC=15ns
Input signals are changed one time during 30ns
10
ICC3N
Active Standby Current
in non power-down
mode
CKE ≥ VIH(min), CS ≥ VIH(min), tCC=15ns
Input signals are changed one time during 2clks
All other pins ≥ VDD-0.2V or ≤ 0.2V
ICC3NS
2.5
mA
mA
(One Bank Active)
IOL= 0mA, Page Burst
All Band Activated, tCCD = tCCD (min)
Operating Current
(Burst Mode)
70
40
60
40
1
2
ICC4
Refresh Current
ICC5
tRFC ≥ tRFC(min)
mA
°C
TCSR range
45
70
Self Refresh Current
ICC6
CKE ≤ 0.2V
CKE ≤ 0.2V
2 Banks
1 Bank
180
160
200
180
uA
uA
Deep Power Down
Current
ICC7
10
Note: 1.Measured with outputs open. Addresses are changed only one time during tCC(min).
2.Refresh period is 64ms. Addresses are changed only one time during tCC(min).
Elite Semiconductor Memory Technology Inc.
Publication Date : Jul. 2009
Revision : 1.6 4/32
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
