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M52D32162A-7BG 参数 Datasheet PDF下载

M52D32162A-7BG图片预览
型号: M52D32162A-7BG
PDF下载: 下载PDF文件 查看货源
内容描述: 1米x 16Bit的X 2Banks手机同步DRAM [1M x 16Bit x 2Banks Mobile Synchronous DRAM]
分类和应用: 存储内存集成电路动态存储器手机
文件页数/大小: 32 页 / 808 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT  
M52D32162A  
MODE REGISTER FIELD TABLE TO PROGRAM MODES  
Register Programmed with MRS  
Address  
Function  
BA  
0
A11~A10/AP  
RFU  
A9  
A8  
A7  
A6  
A5  
A4  
A3  
BT  
A2  
A1  
A0  
W.B.L  
TM  
CAS Latency  
Burst Length  
Test Mode  
CAS Latency  
Burst Type  
Burst Length  
A8  
0
A7  
Type  
A6  
A5  
0
A4  
0
Latency  
Reserved  
Reserved  
2
A3  
Type  
A2  
0
A1  
0
A0  
0
BT = 0  
BT = 1  
0
1
0
1
Mode Register Set  
Reserved  
0
0
0
0
1
1
1
1
0
1
Sequential  
Interleave  
1
2
4
8
1
2
4
8
0
0
1
0
0
1
1
Reserved  
1
0
0
1
0
1
Reserved  
1
1
3
0
1
1
Write Burst Length  
Length  
0
0
Reserved  
Reserved  
Reserved  
Reserved  
1
0
0
Reserved Reserved  
Reserved Reserved  
Reserved Reserved  
Full Page Reserved  
A9  
0
0
1
1
0
1
Burst  
1
0
1
1
0
1
Single Bit  
1
1
1
1
1
Full Page Length: 256  
Note: 1. RFU (Reserved for future use) should stay “0” during MRS cycle.  
2. If A9 is high during MRS cycle, “Burst Read Single Bit Write” function will be enabled.  
3. The full column burst (256 bit) is available only at sequential mode of burst type.  
Elite Semiconductor Memory Technology Inc.  
Publication Date : Jul. 2009  
Revision : 1.6 7/32  
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