ESMT
M52D32162A
ABSOLUTE MAXIMUM RATINGS
Parameter
Voltage on any pin relative to VSS
Voltage on VDD supply relative to VSS
Storage temperature
Symbol
VIN,VOUT
VDD,VDDQ
TSTG
Value
-1.0 ~ 2.6
-1.0 ~ 2.6
-55 ~ + 150
0.7
Unit
V
V
°C
Power dissipation
PD
W
Short circuit current
IOS
50
mA
Note: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
DC OPERATING CONDITIONS
°C
°C
)
Recommended operating conditions (Voltage referenced to VSS = 0V, TA= 0
~ 70
Parameter
Supply voltage
Symbol
VDD,VDDQ
VIH
Min
1.7
Typ
Max
Unit
V
Note
1.8
1.9
Input logic high voltage
Input logic low voltage
Output logic high voltage
Output logic low voltage
Input leakage current
Output leakage current
0.8 x VDDQ
-0.3
1.8
VDDQ+0.3
V
1
VIL
0
-
0.3
-
V
2
VOH
VDDQ – 0.2
-
V
IOH =-0.1mA
VOL
-
0.2
10
10
V
IOL = 0.1mA
IIL
-10
-
uA
uA
3
4
IOL
-10
-
Note : 1.VIH (max) = 2.2V AC for pulse width ≤ 3ns acceptable.
2.VIL (min) = -1.0V AC for pulse width ≤ 3ns acceptable.
3.Any input 0V ≤ VIN ≤ VDDQ, all other pins are not under test = 0V.
4.Dout is disabled, 0V ≤ VOUT ≤ VDDQ.
°C
CAPACITANCE (VDD = 1.8V, TA = 25
, f = 1MHz)
Symbol
Pin
Min
Max
Unit
CLOCK
CCLK
2.0
4.0
pF
RAS , CAS , WE , CS , CKE, LDQM,
CIN
2.0
4.0
pF
UDQM
ADDRESS
DQ0 ~DQ15
CADD
COUT
2.0
3.5
4.0
6.0
pF
pF
Elite Semiconductor Memory Technology Inc.
Publication Date : Jul. 2009
Revision : 1.6 3/32
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
