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M52D128168A-7TG 参数 Datasheet PDF下载

M52D128168A-7TG图片预览
型号: M52D128168A-7TG
PDF下载: 下载PDF文件 查看货源
内容描述: 2M ×16位×4手机银行同步DRAM [2M x 16 Bit x 4 Banks Mobile Synchronous DRAM]
分类和应用: 存储内存集成电路光电二极管动态存储器手机
文件页数/大小: 48 页 / 1178 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT  
M52D128168A  
Deep Power Down Mode Entry & Exit Cycle  
Note:  
DEFINITION OF DEEP POWER MODE FOR Mobile SDRAM:  
Deep Power Down Mode is an operating mode to achieve maximum power reduction by cutting the power of the whole memory  
of the device. Once the device enters in Deep Power Down Mode, data will not be retained. Full initialization is required when  
the device exits from Deep Power Down Mode.  
TO ENTER DEEP POWER DOWN MODE  
1) The deep power down mode is entered by having CS and WE held low with RAS and CAS high at the rising edge of  
the clock. While CKE is low.  
2) Clock must be stable before exited deep power down mode.  
3) Device must be in the all banks idle state prior to entering Deep Power Down mode.  
TO EXIT DEEP POWER DOWN MODE  
4) The deep power down mode is exited by asserting CKE high.  
5) 200μs wait time is required to exit from Deep Power Down.  
6) Upon exiting deep power down an all bank precharge command must be issued followed by two auto refresh commands  
and a load mode register sequence.  
Elite Semiconductor Memory Technology Inc.  
Publication Date: Aug. 2009  
Revision: 1.3 42/48  
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