ESMT
M52D128168A
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Voltage on any pin relative to VSS
Voltage on VDD supply relative to VSS
Storage temperature
SYMBOL
VIN, VOUT
VDD, VDDQ
TSTG
VALUE
-1.0 ~ 2.6
-1.0 ~ 2.6
-55 ~ +150
UNIT
V
V
°C
W
Power dissipation
PD
IOS
1
Short circuit current
50
mA
Note: Permanent device damage may occur if ABSOLUTE MAXIMUM RATING are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
DC OPERATING CONDITION
Recommended operating conditions (Voltage referenced to VSS = 0V, TA = 0 to 70 °C )
PARAMETER
Supply voltage
SYMBOL
VDD, VDDQ
VIH
MIN
1.7
TYP
1.8
1.8
0
MAX
1.9
UNIT
V
NOTE
Input logic high voltage
Input logic low voltage
Output logic high voltage
Output logic low voltage
Input leakage current
0.8xVDDQ
-0.3
VDDQ+0.3
0.3
V
1
VIL
V
2
VOH
VDDQ-0.2
-
-
-
V
IOH = -0.1mA
IOL = 0.1mA
3
VOL
-
0.2
V
IIL
μ A
-2
-2
-
-
2
2
Output leakage current
IOL
μ A
4
Note: 1. VIH(max) = 2.2V AC for pulse width ≤ 3ns acceptable.
2. VIL(min) = -1.0V AC for pulse width ≤ 3ns acceptable.
3. Any input 0V ≤ VIN ≤ VDDQ, all other pins are not under test = 0V.
4. Dout is disabled, 0V ≤ VOUT ≤ VDDQ.
CAPACITANCE (VDD = 1.8V, TA = 25 °C , f = 1MHz)
PARAMETER
Input capacitance (A0 ~ A11, BA0 ~ BA1)
Input capacitance
SYMBOL
MIN
MAX
UNIT
CIN1
1.5
3.0
pF
CIN2
1.5
2.0
3.5
pF
pF
(CLK, CKE, CS , RAS , CAS , WE &
L(U)DQM)
Data input/output capacitance (DQ0 ~ DQ15)
COUT
4.5
Elite Semiconductor Memory Technology Inc.
Publication Date: Aug. 2009
Revision: 1.3 3/48
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
