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M52D128168A-7TG 参数 Datasheet PDF下载

M52D128168A-7TG图片预览
型号: M52D128168A-7TG
PDF下载: 下载PDF文件 查看货源
内容描述: 2M ×16位×4手机银行同步DRAM [2M x 16 Bit x 4 Banks Mobile Synchronous DRAM]
分类和应用: 存储内存集成电路光电二极管动态存储器手机
文件页数/大小: 48 页 / 1178 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT  
M52D128168A  
FUNCTION TRUTH TABLE (TABLE 1)  
Current  
State  
BA  
ADDR  
ACTION  
Note  
CS RAS CAS  
WE  
H
L
L
L
L
L
L
L
H
L
L
L
L
L
L
L
H
L
L
L
L
L
L
L
H
L
L
L
L
L
L
L
H
L
L
L
L
L
H
L
L
L
L
L
X
H
H
H
L
L
L
L
X
H
H
H
H
L
X
H
H
L
H
H
L
X
H
L
X
H
L
H
L
X
H
L
H
L
H
L
X
X
H
L
H
L
H
L
X
X
H
L
H
L
H
L
X
X
H
L
X
X
X
X
H
L
X
X
X
BA  
BA  
BA  
X
X
X
X
NOP  
NOP  
ILLEGAL  
2
2
IDLE  
CA, A10/AP ILLEGAL  
RA  
A10/AP  
Row (&Bank) Active ; Latch RA  
NOP  
Auto Refresh or Self Refresh  
Mode Register Access  
NOP  
NOP  
ILLEGAL  
4
5
5
X
L
OP code  
X
OP code  
X
H
H
L
X
X
X
X
X
2
2
Row  
Active  
BA  
BA  
BA  
BA  
X
X
X
X
BA  
BA  
BA  
BA  
X
X
X
X
BA  
BA  
BA  
BA  
X
X
X
X
BA  
BA  
X
X
X
CA, A10/AP Begin Read ; latch CA ; determine AP  
CA, A10/AP Begin Write ; latch CA ; determine AP  
RA  
A10/AP  
L
H
H
L
X
H
H
L
ILLEGAL  
Precharge  
ILLEGAL  
L
L
X
X
X
X
X
H
H
H
H
L
NOP (Continue Burst to End Æ Row Active)  
NOP (Continue Burst to End Æ Row Active)  
Term burst Æ Row active  
Read  
Write  
CA, A10/AP Term burst, New Read, Determine AP  
CA, A10/AP Term burst, New Write, Determine AP  
RA  
A10/AP  
L
3
2
H
H
L
X
H
H
L
ILLEGAL  
L
L
Term burst, Precharge timing for Reads  
ILLEGAL  
NOP (Continue Burst to End Æ Row Active)  
NOP (Continue Burst to End Æ Row Active)  
Term burst Æ Row active  
X
X
X
X
X
H
H
H
H
L
CA, A10/AP Term burst, New Read, Determine AP  
CA, A10/AP Term burst, New Write, Determine AP  
RA  
A10/AP  
3
3
2
3
L
H
H
L
X
H
H
L
H
L
X
H
H
L
ILLEGAL  
L
L
Term burst, Precharge timing for Writes  
ILLEGAL  
NOP (Continue Burst to End Æ Row Active)  
NOP (Continue Burst to End Æ Row Active)  
ILLEGAL  
X
X
X
X
X
H
H
H
L
Read with  
Auto  
Precharge  
CA, A10/AP ILLEGAL  
RA, RA10  
ILLEGAL  
ILLEGAL  
2
2
L
X
X
X
X
X
H
H
H
L
NOP (Continue Burst to End Æ Row Active)  
NOP (Continue Burst to End Æ Row Active)  
ILLEGAL  
Write with  
Auto  
Precharge  
X
X
X
X
BA  
BA  
X
CA, A10/AP ILLEGAL  
RA, RA10  
X
H
L
ILLEGAL  
ILLEGAL  
L
Elite Semiconductor Memory Technology Inc.  
Publication Date: Aug. 2009  
Revision: 1.3  
26/48  
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