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M52D128168A-7TG 参数 Datasheet PDF下载

M52D128168A-7TG图片预览
型号: M52D128168A-7TG
PDF下载: 下载PDF文件 查看货源
内容描述: 2M ×16位×4手机银行同步DRAM [2M x 16 Bit x 4 Banks Mobile Synchronous DRAM]
分类和应用: 存储内存集成电路光电二极管动态存储器手机
文件页数/大小: 48 页 / 1178 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT  
M52D128168A  
Current  
State  
BA  
ADDR  
ACTION  
Note  
CS RAS CAS  
WE  
H
L
L
L
L
L
L
H
L
L
L
L
L
L
H
L
L
L
L
H
L
L
L
L
X
H
H
H
L
X
H
H
L
H
H
L
X
H
H
L
H
H
L
X
H
L
H
L
X
H
H
L
X
H
L
X
H
L
X
X
H
L
X
H
L
X
X
X
X
X
X
X
H
L
X
X
X
BA  
BA  
BA  
X
X
X
X
BA  
BA  
BA  
X
X
X
X
X
X
X
X
X
X
CA  
RA  
A10/AP  
NOP Æ Idle after tRP  
NOP Æ Idle after tRP  
ILLEGAL  
ILLEGAL  
ILLEGAL  
NOP Æ Idle after tRP  
ILLEGAL  
NOP Æ Row Active after tRCD  
NOP Æ Row Active after tRCD  
ILLEGAL  
ILLEGAL  
ILLEGAL  
ILLEGAL  
ILLEGAL  
NOP Æ Idle after tRFC  
NOP Æ Idle after tRFC  
ILLEGAL  
ILLEGAL  
ILLEGAL  
Precharging  
2
2
2
4
L
L
X
X
X
X
X
H
H
H
L
L
L
X
H
H
L
Row  
Activating  
2
2
2
2
CA  
RA  
A10/AP  
X
X
X
X
X
X
X
X
X
X
X
Refreshing  
L
X
H
H
H
L
NOP Æ Idle after 2clocks  
NOP Æ Idle after 2clocks  
ILLEGAL  
ILLEGAL  
ILLEGAL  
Mode  
Register  
Accessing  
X
X
X
X
X
X
X
Abbreviations:  
RA = Row Address  
NOP = No Operation Command  
BA = Bank Address  
CA = Column Address  
AP = Auto Precharge  
*Note: 1. All entries assume the CKE was active (High) during the precharge clock and the current clock cycle.  
2. Illegal to bank in specified state; Function may be legal in the bank indicated by BA, depending on the state of the  
bank.  
3. Must satisfy bus contention, bus turn around, and/or write recovery requirements.  
4. NOP to bank precharge or in idle state. May precharge bank indicated by BA (and A10/AP).  
5. Illegal if any bank is not idle.  
Elite Semiconductor Memory Technology Inc.  
Publication Date: Aug. 2009  
Revision: 1.3 27/48  
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