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M32L1632512A-7Q 参数 Datasheet PDF下载

M32L1632512A-7Q图片预览
型号: M32L1632512A-7Q
PDF下载: 下载PDF文件 查看货源
内容描述: [Synchronous DRAM, 512KX32, 6ns, CMOS, PQFP100,]
分类和应用: 时钟动态存储器内存集成电路
文件页数/大小: 54 页 / 877 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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M32L1632512A  
AC OPERATING TEST CONDITIONS (VDD = 3.3V ± 0.3V, TA = 0 to 70  
)
°C  
Parameter  
Value  
VIH/VIL = 2.4V/0.4V  
1.4V  
AC Input levels  
Input timing measurement reference level  
Input rise and fall-time (See note3)  
tR/tF = 1ns/1ns  
Output timing measurement reference level  
Output load condition  
1.4V  
See Fig. 2  
VREF = 1.4V  
50  
3 .3 V  
1200  
VOH (DC) =2.4V , IOH = -2 m A  
VOL (DC) =0.4V , IOL = 2 m A  
Ou tput  
Ou tput  
Z0 =50  
30pF  
30pF  
870  
(Fig. 1) DC Output Load Circuit  
(Fig. 2) AC Output Load Circuit  
AC CHARACTERISTICS  
(AC operating conditions unless otherwise noted)  
-5/5S  
-6/6S  
-7/7S  
-8/8S  
Parameter  
Symbol  
Unit  
Note  
Min Max Min Max Min Max Min Max  
CAS latency =3  
5
7.5  
-
6
8
-
7
10  
-
8
12  
-
CLK cycle time  
1000  
1000  
1000  
1000  
ns  
ns  
1
1, 2  
2
tCC  
tSAC  
tOH  
CAS latency =2  
CAS latency =3  
CAS latency =2  
CAS latency =3  
CAS latency =2  
CLK to valid  
output delay  
4.5  
5
5.5  
6
6
7
6.5  
8
-
-
-
-
Output data  
hold time  
2
2
2
2
2
2
ns  
ns  
ns  
2
2
2
CLK high pulse width  
CLK low pulse width  
Input setup time  
2
2.5  
3
3
3
3
3
2
tCH  
tCL  
tSS  
tSH  
tSLZ  
2
2
1
1
2
2
1
1
2.5  
2
3
2.5  
1
ns  
ns  
ns  
ns  
Input hold time  
1
CLK to output in Low-Z  
CLK to output CAS latency =3  
1
1
-
-
5
5
-
-
5.5  
6
-
-
6
7
-
-
6.5  
8
ns  
tSHZ  
In Hi-Z  
CAS latency =2  
* All AC parameters are measured from half to half.  
Elite Semiconductor Memory Technology Inc.  
Publication Date : Jun. 2001  
Revision : 1.6  
6/54  
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