M32L1632512A
DC CHARACTERISTICS
Recommended operating condition unless otherwise noted, TA = 0 to 70
VIH(min) /VIL(max) =2.0V/0.8V
°C
Version
CAS
Parameter
Symbol
Test Condition
Unit Note
Latency
-5/5S -6/6S -7/7S -8/8S
Burst Length = 1
3
230 210 195 170
Operating Current
(One Bank Active)
mA
mA
mA
1
ICC1
,
≥
tRC ≥ tRC(min) tCC tCC(min)
2
230 210 195 170
IOL = 0 mA
ICC2P
2
2
2
2
2
2
2
2
CKE ≤ VIL(max), tCC = 15ns
Precharge Standby Current
in power-down mode
ICC2PS
CKE ≤ VIL(max), CLK ≤ VIL(max), tCC = ∞
CKE ≥ VIH(min), CS ≥ VIH(min), = 15ns
Input signals are changed one time during
30ns
tCC
ICC2N
35
35
35
35
Precharge Standby Current
in non power-down mode
∞
CKE ≥ VIH(min), CLK ≤ VIL(max),
input signals are stable
=
tCC
ICC2NS
15
15
15
15
ICC3P
3
3
3
3
3
3
3
3
CKE ≤ VIL(max),
= 15ns
tCC
Active Standby Current
in power-down mode
mA
mA
ICC3PS
∞
CKE ≤ VIL(min), CLK ≤ VIL(max),
=
tCC
ICC3N CKE ≥ VIH(min), CS ≥ VIH(min),
= 15ns
tCC
Active Standby Current
in non power-down mode
(One Bank Active)
60
60
60
60
Input signals are changed one time during
30ns
CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞
ICC3NS
20
20
20
20
input signals are stable
IOL = 0 mA, Page Burst
3
230 210 195 170
Operating Current
(Burst Mode)
All Banks Activated,
(min)
=
ICC4
tCCD tCCD
mA 1, 2
2
3
230 210 195 170
190 170 160 150
Refresh Current
ICC5
mA
mA
3
4
tRC ≥ tRC(min)
2
190 170 160 150
Self Refresh Current
ICC6
ICC7
CKE ≤ 0.2V
tCC ≥ tCC(min), IOL = 0 mA,
2
2
2
2
Operating Current
(One Bank Block Write)
220 200 190 180 mA
tBWC(min)
*Note : 1. Measured with outputs open.
2. Assumes minimum column address update cycle tCCD(min).
3. Refresh period is 32ms.
4. Assumes minimum column address update cycle tBWC(min).
Elite Semiconductor Memory Technology Inc.
Publication Date : Jun. 2001
Revision : 1.6 5/54
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
