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M24L16161A-85BI 参数 Datasheet PDF下载

M24L16161A-85BI图片预览
型号: M24L16161A-85BI
PDF下载: 下载PDF文件 查看货源
内容描述: [DRAM,]
分类和应用: 动态存储器
文件页数/大小: 15 页 / 212 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT
Timing Waveforms
Read Cycle - Addressed Controlled
Preliminary
M24L16161A
t
RC
Address
t
AA
t
OH
t
OH
D
OUT
Read Cycle - CE1 Controlled
t
RC
Address
t
AA
CE1
t
ACE1
t
CLZ5
HB, LB
t
BLZ5
t
BE
t
CHZ5
5
t
BHZ
OE
t
OE
5
t
OLZ
5
t
OHZ
D
OUT
Notes:
1. WE is high for Read Cycle.
2. Device is continuously enabled CE1 = V
IL
, HB = V
IL
and, or LB = V
IL
.
3. Address valid prior to or coincident with CE1 and ( HB and, or LB ) transition low.
4. OE = V
IL
.
5. Transition is measured
±500mV
from steady state. This parameter is sampled and not 100% tested.
Elite Semiconductor Memory Technology Inc.
Publication Date : Jul. 2003
Revision : 0.2
6/15