ESMT
Preliminary
M24L16161A
AC Characteristics (TA = -25°C to + 85°C (Standard), TA = -40°C to + 85°C (Industrial), VCC = 2.7V to 3.3V)
M24L16161A-70
M24L16161A-85
Unit
Symbol
Parameter
Min.
Min.
Max.
Max.
READ CYCLE
TRC
TAA
Read Cycle Time
Address Access Time
70
-
-
85
-
-
ns
ns
ns
70
70
85
85
TACE1
-
-
Chip Enable ( CE1) Access Time
Chip Enable (CE2) Access Time
Output Enable to Output Valid
Byte Enable Access Time
TACE2
TOE
-
-
70
35
70
-
-
-
85
40
85
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
TBE
-
TCLZ
TOLZ
TBLZ
THZ
Chip Enable to Output in Low Z
Output Enable to Output in Low Z
Byte Enable to Output in Low Z
Chip Disable to Output in High Z
Output Disable to Output in High Z
Byte Disable to Output in High Z
Output Hold from Address Change
10
5
10
5
-
-
10
-
-
10
-
25
25
25
-
35
35
35
-
TOHZ
TBHZ
TOH
-
-
-
-
10
10
WRITE CYCLE
TWC
TWP
TAW
TCW
TBW
TAS
Write Cycle Time
70
50
60
60
60
0
-
-
85
60
70
70
70
0
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Write Pulse Width
-
-
Address Valid to End of Write
Chip Enable to End of Write
Byte Enable to End of Write
Address Setup Time
-
-
-
-
-
-
-
TWR
TWHZ
TOW
TDW
TDH
Write Recovery Time
0
-
0
-
Write to Output in High Z
Output Active to End of Write
Data to Write Time Overlap
Data Hold from Write Time
-
20
-
-
30
-
5
5
30
0
-
30
0
-
-
-
Note: THZ, TOHZ and TBHZ and TWHZ are defined as the time at which the outputs achieve the open circuit
Condition and are not referred to output voltage levels.
Elite Semiconductor Memory Technology Inc.
Publication Date : Jul. 2003
Revision : 0.2 5/15
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
