ESMT
Truth Table
CE1
H
X
L
L
L
L
L
L
L
L
L
Preliminary
M24L16161A
CE2
H
L
H
H
H
H
H
H
H
H
H
OE
X
X
X
H
H
L
L
L
X
X
X
WE
X
X
X
H
H
H
H
H
L
L
L
LB
X
X
H
L
X
L
H
L
L
H
L
HB
X
X
H
X
L
H
L
L
H
L
L
I/O1 to I/O8
High – Z
High – Z
High – Z
High – Z
High – Z
D-out
High – Z
D-out
D-in
High – Z
D-in
I/O9 to
I/O16
High – Z
High – Z
High – Z
High – Z
High – Z
High – Z
D-out
D-out
High – Z
D-in
D-in
Mode
Deselect
Deselect
Deselect
Output Disable
Output Disable
Lower byte Read
Upper Byte Read
Word Read
Lower Byte Write
Upper Byte Write
Word Write
Power
Standby
Deep Power Down
Standby
Active
Active
Active
Active
Active
Active
Active
Active
Note: X = H or L
Recommended DC Operating Conditions
(T
A
= -25°C to + 85°C (Standard), T
A
= -40°C to + 85°C (Industrial))
Symbol
VCC
GND
V
IH
V
IL
Parameter
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Min.
2.7
0
2.2
-0.2
Typ.
3
0
-
-
Max.
3.3
0
V
CC
+ 0.2
+0.6
Unit
V
V
V
V
Capacitance
( T
A
= 25°C, f = 1.0MHz )
Symbol
C
IN
*
C
I/O
*
Parameter
Input Capacitance
Input / Output Capacitance
Conditions
V
IN
= 0V
V
I/O
= 0V
Min.
-
-
Max.
8
10
Unit
pF
pF
* These parameters are sampled and not 100% tested.
Elite Semiconductor Memory Technology Inc.
Publication Date : Jul. 2003
Revision : 0.2
3/15
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
