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M24L16161A-85BI 参数 Datasheet PDF下载

M24L16161A-85BI图片预览
型号: M24L16161A-85BI
PDF下载: 下载PDF文件 查看货源
内容描述: [DRAM,]
分类和应用: 动态存储器
文件页数/大小: 15 页 / 212 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT  
Preliminary  
M24L16161A  
AC Test Conditions (TA = -25°C to + 85°C (Standard), TA = -40°C to + 85°C (Industrial))  
Input Pulse Levels  
0.4V to 2.4V  
5 ns  
Input Rise And Fall Time  
Input and Output Timing Reference Levels  
Output Load  
1.5V  
See Figures 1 and 2  
AC Test Loads  
Ω
RL = 50  
VL = 1.5V  
DOUT  
CL 1 = 50pF  
Ω
Z0 = 50  
Note :  
1. Including scope and jig capacitance.  
Power-Up Sequence  
1. Supply power.  
2. Maintain stable power for longer than 200μs.  
Deep Power Entry Sequence  
1. Keep CE2 low state.  
Deep power down mode is maintained while CE2 is low state.  
Deep Power Exit Sequence  
1. Keep CE2 high state.  
2. Maintained stable power for longer than 200μs.  
Elite Semiconductor Memory Technology Inc.  
Publication Date : Jul. 2003  
Revision : 0.2  
10/15