ESMT
4SRAM
Preliminary
M24L16161A
1M x 16 Bit
PSEUDO SRAM
Features
1T SRAM Memory Cell
Operating voltage: 2.7V to 3.3V
Access times: 70 / 85 ns (max.)
1Mx16 bit Organization
Wide operating temperature range :
- Standard grade : -25°C to + 85°C
- Industrial grade : -40°C to + 85°C
Data mask function by /LB, /HB
Common I/O using three-state output
Available in 48-ball 6x8mm Mini-BGA packages
All inputs and outputs are directly TTL-compatible
Ordering Information
48-ball 6x8mm Mini-BGA
Product No.
M24L16161A – 70B
M24L16161A – 85B
M24L16161A – 70BI
M24L16161A – 85BI
Operating
Voltage
Operating
Temperature
-25°C ~ +85°C
Operating Current
Icc1 (max.)
Standby Current
Isb1 ( max.)
Packing Type
+2.7V ~ +3.3V
25 mA
100 uA
6 x 8 mm Mini-BGA
-40°C ~ +85°C
General Description
The M24L16161A is a low operating current 16,777,216-
bit static random access memory organized as 1,048,576
words by 16 bits and operates on low power voltage from
2.7V to 3.3V. It is built using high performance CMOS
process.
Inputs and three-state outputs are TTL compatible and
allow for direct interfacing with common system bus
structures.
The chip enable input is provided for POWER-DOWN,
device enable. Two byte enable inputs and an output
enable input are included for easy interfacing.
Pin Configurations
Mini-BGA 48-ball Top View
1
A
B
C
D
E
F
G
H
LB
I/O
9
I/O
10
GND
VCC
I/O
15
I/O
16
A18
2
OE
HB
I/O
11
I/O
12
I/O
13
I/O
14
A19
A8
3
A0
A3
A5
A17
DNU
A14
A12
A9
4
A1
A4
A6
A7
A16
A15
A13
A10
5
A2
CE1
I/O
2
I/O
4
I/O
5
I/O
6
WE
A11
6
CE2
I/O
1
I/O
3
VCC
GND
I/O
7
I/O
8
DNU
Note : DNU pins are to be connected to Vss or left open.
Elite Semiconductor Memory Technology Inc.
Publication Date : Jul. 2003
Revision : 0.2
1/15
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
