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M24L16161A-85BI 参数 Datasheet PDF下载

M24L16161A-85BI图片预览
型号: M24L16161A-85BI
PDF下载: 下载PDF文件 查看货源
内容描述: [DRAM,]
分类和应用: 动态存储器
文件页数/大小: 15 页 / 212 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT  
Preliminary  
M24L16161A  
Avoid Timing  
ESMT Pseudo SRAM has a timing which is not supported at read operation, If your system has multiple invalid address  
signal shorter than tRC during over 15μs at read operation shown as in Abnormal Timing, it requires a normal read timing at  
leat during 15μs shown as in Avoidable timing 1 or toggle CE1 to high (tRC) one time at least shown as in Avoidable  
Timing 2.  
Abnormal Timing  
μ
15  
s
CE1  
WE  
t
RC  
Address  
Avoidable Timing 1  
μ
15  
s
CE1  
WE  
t
RC  
Address  
Avoidable Timing 2  
μ
15  
s
CE1  
WE  
t
RC  
t
RC  
Address  
Elite Semiconductor Memory Technology Inc.  
Publication Date : Jul. 2003  
Revision : 0.2 13/15  
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