欢迎访问ic37.com |
会员登录 免费注册
发布采购

M14D5121632A-2.5BIG2H 参数 Datasheet PDF下载

M14D5121632A-2.5BIG2H图片预览
型号: M14D5121632A-2.5BIG2H
PDF下载: 下载PDF文件 查看货源
内容描述: [DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84, 8 X 12.50 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, BGA-84]
分类和应用: 动态存储器双倍数据速率内存集成电路
文件页数/大小: 62 页 / 1001 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
 浏览型号M14D5121632A-2.5BIG2H的Datasheet PDF文件第31页浏览型号M14D5121632A-2.5BIG2H的Datasheet PDF文件第32页浏览型号M14D5121632A-2.5BIG2H的Datasheet PDF文件第33页浏览型号M14D5121632A-2.5BIG2H的Datasheet PDF文件第34页浏览型号M14D5121632A-2.5BIG2H的Datasheet PDF文件第36页浏览型号M14D5121632A-2.5BIG2H的Datasheet PDF文件第37页浏览型号M14D5121632A-2.5BIG2H的Datasheet PDF文件第38页浏览型号M14D5121632A-2.5BIG2H的Datasheet PDF文件第39页  
ESMT  
M14D5121632A (2H)  
Operation Temperature Condition (TC) -40°C~95°C  
ODT Timing Mode Switch at Entering Power-Down Mode  
T-3  
T-5  
T-2  
T-1  
T-4  
T2  
T1  
T0  
T3  
C L K  
C L K  
t
ANPD  
C K E  
t
IS  
Entering slow exit Active Power-Down mode  
or Precharge Power-Down mode.  
t
IS  
ODT  
t
AOFD  
Active and Standby  
mode timings to  
be applied.  
Internal  
Term Res.  
Rtt  
t
IS  
ODT  
Power-Down  
mode timings to  
be applied.  
t
AOFPD(max.)  
Internal  
Term Res.  
Rtt  
t
IS  
ODT  
t
AOND  
Active and Standby  
mode timings to  
be applied.  
Internal  
Term Res.  
Rtt  
t
IS  
ODT  
t
AONPD(max.)  
Power-Down  
mode timings to  
be applied.  
Internal  
Term Res.  
Rtt  
Elite Semiconductor Memory Technology Inc.  
Publication Date : Aug. 2011  
Revision : 1.1  
35/62  
 复制成功!