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M13S5121632A 参数 Datasheet PDF下载

M13S5121632A图片预览
型号: M13S5121632A
PDF下载: 下载PDF文件 查看货源
内容描述: 8M ×16位×4银行双倍数据速率SDRAM [8M x 16 Bit x 4 Banks Double Data Rate SDRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 47 页 / 966 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT  
M13S5121632A  
Write Interrupted by a Write  
A Burst Write can be interrupted before completion of the burst by a new Write command, with the only restriction that the  
interval that separates the commands must be at least one clock cycle. When the previous burst is interrupted, the remaining  
addresses are overridden by the new address and data will be written into the device until the programmed burst length is satisfied.  
<Burst Length = 4>  
0
1
2
3
4
5
6
7
8
C L K  
C L K  
1tC K  
NO P  
WRITE A  
NO P  
NO P  
NO P  
NO P  
NO P  
NO P  
WRITE B  
C O M M A N D  
DQ S  
Din A0  
Din B0  
Din B1  
Din B2  
Din B3  
Din A1  
D Q ' s  
The following functionality establishes how a Write command may interrupt a Read burst.  
1. For Write commands interrupting a Read burst, a Read burst, a Burst Terminate command is required to stop the read burst  
and tristate the DQ bus prior to valid input write data. Once the Burst Terminate command has been issued, the minimum  
delay to a Write command = RU(CL) [CL is the CAS Latency and RU means round up to the nearest integer].  
2. It is illegal for a Write command to interrupt a Read with autoprecharge command.  
Elite Semiconductor Memory Technology Inc.  
Publication Date : Oct. 2008  
Revision : 1.0 19/47  
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