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M13S5121632A 参数 Datasheet PDF下载

M13S5121632A图片预览
型号: M13S5121632A
PDF下载: 下载PDF文件 查看货源
内容描述: 8M ×16位×4银行双倍数据速率SDRAM [8M x 16 Bit x 4 Banks Double Data Rate SDRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 47 页 / 966 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT  
M13S5121632A  
Essential Functionality for DDR SDRAM  
Burst Read Operation  
Burst Read operation in DDR SDRAM is in the same manner as the current SDRAM such that the Burst read command is  
issued by asserting CS and CAS low while holding RAS and WE high at the rising edge of the clock (CLK) after tRCD from  
the bank activation. The address inputs determine the starting address for the Burst, The Mode Register sets type of burst  
(Sequential or interleave) and burst length (2, 4, 8). The first output data is available after the CAS Latency from the READ  
command, and the consecutive data are presented on the falling and rising edge of Data Strobe (DQS) adopted by DDR SDRAM  
until the burst length is completed.  
<Burst Length = 4, CAS Latency = 3>  
0
1
2
3
4
5
6
7
8
C L K  
C L K  
NOP  
R EAD  
A
N OP  
NO P  
N OP  
N OP  
NO P  
CO M M AND  
NO P  
N OP  
D QS  
C AS L a t en c y =3  
D o u t0 Do u t 1 D o u t2  
DQ' s  
D o u t3  
Elite Semiconductor Memory Technology Inc.  
Publication Date : Oct. 2008  
Revision : 1.0 15/47  
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