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M13S5121632A 参数 Datasheet PDF下载

M13S5121632A图片预览
型号: M13S5121632A
PDF下载: 下载PDF文件 查看货源
内容描述: 8M ×16位×4银行双倍数据速率SDRAM [8M x 16 Bit x 4 Banks Double Data Rate SDRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 47 页 / 966 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT  
M13S5121632A  
Read Interrupted by a Read  
A Burst Read can be interrupted before completion of the burst by new Read command of any bank. When the previous burst is  
interrupted, the remaining addresses are overridden by the new address with the full burst length. The data from the first Read  
command continues to appear on the outputs until the CAS latency from the interrupting Read command is satisfied. At this point  
the data from the interrupting Read command appears. Read to Read interval is minimum 1 Clock.  
<Burst Length = 4, CAS Latency = 3>  
0
1
2
3
4
5
6
7
8
C L K  
C L K  
R E A D  
B
N O P  
N O P  
N O P  
N O P  
N O P  
R E A D  
A
N O P  
N O P  
C O M M A N D  
D Q S  
C A S L a t e n c y = 3  
Dout  
B0  
Dout  
D Q ' s  
Dout  
A
0
Dout  
A
1
B1 Dout B2 Dout B3  
Read Interrupted by a Write & Burst Stop  
To interrupt a burst read with a write command, Burst Stop command must be asserted to avoid data contention on the I/O bus  
by placing the DQ’s(Output drivers) in a high impedance state. To insure the DQ’s are tri-stated one cycle before the beginning the  
write operation, Burt stop command must be applied at least RU(CL) clocks RU means round up to the nearest integerbefore  
the Write command.  
<Burst Length = 4, CAS Latency = 3>  
0
1
2
3
4
5
6
7
8
C L K  
C L K  
Bu r st St op  
NO P  
NO P  
NO P  
NO P  
R E A D  
NO P  
W R I T E  
NO P  
C O M M A N D  
DQ S  
C A S L a t e n c y = 3  
Dout  
0
Dout  
1
Din 0  
Din 3  
Din 1 Din 2  
D Q ' s  
Elite Semiconductor Memory Technology Inc.  
Publication Date : Oct. 2008  
Revision : 1.0 17/47  
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