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M13S2561616A-5BIG2S 参数 Datasheet PDF下载

M13S2561616A-5BIG2S图片预览
型号: M13S2561616A-5BIG2S
PDF下载: 下载PDF文件 查看货源
内容描述: [DDR DRAM, 16MX16, 0.7ns, CMOS, PBGA60, 8 X 13 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, BGA-60]
分类和应用: 动态存储器双倍数据速率内存集成电路
文件页数/大小: 49 页 / 1245 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT  
M13S2561616A (2S)  
Operation Temperature Condition -40°C~85°C  
Mode Register Definition  
Mode Register Set (MRS)  
The mode register stores the data for controlling the various operating modes of DDR SDRAM. It programs CAS latency,  
addressing mode, burst length, test mode, DLL reset and various vendor specific options to make DDR SDRAM useful for  
variety of different applications. The default value of the register is not defined, therefore the mode register must be written after  
EMRS setting for proper DDR SDRAM operation. The mode register is written by asserting low on CS , RAS , CAS , WE  
and BA0~BA1 (The DDR SDRAM should be in all bank precharge with CKE already high prior to writing into the mode register).  
The state of address pins A0~A12 in the same cycle as CS , RAS , CAS , WE and BA0~BA1 going low is written in the  
mode register. Two clock cycles are requested to complete the write operation in the mode register. The mode register contents  
can be changed using the same command and clock cycle requirements during operation as long as all banks are in the idle  
state. The mode register is divided into various fields depending on functionality. The burst length uses A0~A2, addressing  
mode uses A3, CAS latency (read latency from column address) uses A4~A6. A7 is used for test mode. A8 is used for DLL  
reset. A7 must be set to low for normal MRS operation. Refer to the table for specific codes for various burst length, addressing  
modes and CAS latencies.  
BA1 BA0 A12 A11 A10  
A9  
A8  
A7  
A6  
A5  
A4  
A3  
BT  
A2  
A1  
A0  
Address Bus  
Burst Length  
0
0
RFU  
DLL  
TM  
Mode Register  
CAS Latency  
A8  
0
DLL Reset  
No  
A7  
0
Mode  
Normal  
Test  
A3  
0
Burst Type  
Sequential  
Interleave  
1
Yes  
1
1
Burst Length  
A2 A1 A0  
Length  
CAS Latency  
A6 A5 A4  
Latency  
Reserved  
Reserved  
Reserved  
3
Sequential Interleave  
BA1 BA0  
Operating Mode  
MRS Cycle  
0
0
0
0
1
1
1
0
0
1
1
0
1
1
0
1
0
1
0
0
1
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
Reserved Reserved  
0
0
0
1
2
4
8
2
4
8
EMRS Cycle  
4
Reserved Reserved  
Reserved Reserved  
Reserved Reserved  
Reserved Reserved  
2.5  
Reserved  
Note: RFU (Reserved for future use) must stay “0” during MRS cycle.  
Elite Semiconductor Memory Technology Inc.  
Publication Date : Jan. 2015  
Revision : 1.0 14/49