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M13S2561616A-5BIG2S 参数 Datasheet PDF下载

M13S2561616A-5BIG2S图片预览
型号: M13S2561616A-5BIG2S
PDF下载: 下载PDF文件 查看货源
内容描述: [DDR DRAM, 16MX16, 0.7ns, CMOS, PBGA60, 8 X 13 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, BGA-60]
分类和应用: 动态存储器双倍数据速率内存集成电路
文件页数/大小: 49 页 / 1245 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT  
M13S2561616A (2S)  
Operation Temperature Condition -40°C~85°C  
Extended Mode Register Set (EMRS)  
The extended mode register stores the data enabling or disabling DLL, and selecting output drive strength. The default value of  
the extended mode register is not defined, therefore the extended mode register must be written after power up for enabling or  
disabling DLL. The extended mode register is written by asserting low on CS , RAS , CAS , WE and high on BA0 (The DDR  
SDRAM should be in all bank precharge with CKE already high prior to writing into the extended mode register). The state of  
address pins A0~A12 and BA0~BA1 in the same cycle as CS , RAS , CAS and WE going low is written in the extended  
mode register. Two clock cycles are requested to complete the write operation in the mode register. The mode register contents  
can be changed using the same command and clock cycle requirements during operation as long as all banks are in the idle  
state. A0 is used for DLL enable or disable. A1 and A6 are used for selecting output drive strength. “High” on BA0 is used for  
EMRS. All the other address pins except A0~A1, A6 and BA0 must be set to low for proper EMRS operation. Refer to the table  
for specific codes.  
Address Bus  
BA1 BA0 A12 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0  
Extended Mode Register  
0
1
RFU  
DS  
RFU  
DS DLL  
A6  
A1  
0
Drive Strength  
A0  
DLL Enable  
Enable  
0
0
1
1
Normal  
Weak  
RFU  
0
1
1
Disable  
0
1
Matched impedance  
BA1 BA0 Operating Mode  
0
0
0
1
MRS Cycle  
EMRS Cycle  
Note: RFU (Reserved for future use) must stay “0” during EMRS cycle.  
Elite Semiconductor Memory Technology Inc.  
Publication Date : Jan. 2015  
Revision : 1.0 15/49