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M12S16161A-10TG 参数 Datasheet PDF下载

M12S16161A-10TG图片预览
型号: M12S16161A-10TG
PDF下载: 下载PDF文件 查看货源
内容描述: 512K X 16位X 2Banks同步DRAM [512K x 16Bit x 2Banks Synchronous DRAM]
分类和应用: 存储内存集成电路光电二极管动态存储器时钟
文件页数/大小: 28 页 / 866 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT
Mode Register
BA
x
0
A10
x
0
A9
1
0
A8
0
0
A7
0
0
A6
A5 A4 A3
LTMODE
WT
LTMODE
WT
A2
A1 A0
BL
BL
M12S16161A
Address bus
Burst Read and Single Write (for Write
Through Cache)
Mode Register Set
x =Don’t care
A2-A0
000
001
010
011
100
101
110
111
0
1
A6-A4
000
001
010
011
100
101
110
111
WT=0
1
2
4
8
R
R
R
Full page
Sequential
Interleave
WT=1
1
2
4
8
R
R
R
R
Burst length
Wrap type
Latency mode
Mode Register Write Timing
CAS Latency
R
R
2
3
R
R
R
R
Remark R : Reserved
CLOCK
CKE
CS
RAS
CAS
WE
A0-A11
Mode Register W rite
Elite Semiconductor Memory Technology Inc.
Publication Date
:
Jun. 2005
Revision
:
1.0
7/28