ESMT
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, T
A
= 0
°C
~ 70
°C
)
Parameter
Operating Current
(One Bank Active)
Precharge Standby
Current in power-down
mode
Precharge Standby
Current in non
power-down mode
Symbol
Test Condition
CAS
Latency
M12S16161A
Version
-10
35
-
0.2
-
-15
25
Unit Note
mA
mA
mA
mA
1
I
CC1
I
CC2P
I
CC2PS
I
CC2N
Burst Length = 1
t
RC
≥
t
RC
(min), t
CC
≥
t
CC
(min), I
OL
= 0mA
CKE
≤
V
IL
(max), t
CC
=15ns
CKE
≤
V
IL
(max), CLK
≤
V
IL
(max), t
CC
=
∞
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
=15ns
Input signals are changed one time during 30ns
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
CKE
≤
V
IL
(max), t
CC
=15ns
CKE
≤
V
IL
(max), CLK
≤
V
IL
(max), t
CC
=
∞
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
=15ns
Input signals are changed one time during 30ns
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
I
OL
= 0Ma, Page Burst
All Band Activated, tCCD = tCCD (min)
t
RC
≥
t
RC
(min)
TCSR range
2 Banks
I
CC2NS
Active Standby Current
in power-down mode
Active Standby Current
in non power-down
mode
(One Bank Active)
Operating Current
(Burst Mode)
Refresh Current
I
CC3P
I
CC3PS
I
CC3N
I
CC3NS
I
CC4
I
CC5
-
-
-
15
-
35
35
45
100
95
90
85
10
25
25
70
120
110
100
90
mA
mA
mA
mA
mA
1
mA
2
°C
Self Refresh Current
I
CC6
CKE
≤
0.2V
1 Bank
1/2 Bank
1/4 Bank
uA
Deep Power Down
Current
I
CC7
CKE
≤
0.2V
uA
Note:
1.Measured with outputs open. Addresses are changed only one time during t
CC
(min).
2.Refresh period is 32ms. Addresses are changed only one time during t
CC
(min).
Elite Semiconductor Memory Technology Inc.
Publication Date
:
Jun. 2005
Revision
:
1.0
4/28
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
