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M11L416256SA-40T 参数 Datasheet PDF下载

M11L416256SA-40T图片预览
型号: M11L416256SA-40T
PDF下载: 下载PDF文件 查看货源
内容描述: [EDO DRAM, 256KX16, 40ns, CMOS, PDSO40, TSOP2-44/40]
分类和应用: 动态存储器光电二极管内存集成电路
文件页数/大小: 16 页 / 230 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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M11L416256A/M11L416256SA  
Important Notice  
All rights reserved.  
No part of this document may be reproduced or duplicated in any form or by any  
means without the prior permission of EliteMT.  
The contents contained in this document are believed to be accurate at the time of  
publication. EliteMT assumes no responsibility for any error in this document, and  
reserves the right to change the products or specification in this document without  
notice.  
The information contained herein is presented only as a guide or examples for the  
application of our products. No responsibility is assumed by EliteMT for any  
infringement of patents, copyrights, or other intellectual property rights of third  
parties which may result from its use. No license, either express , implied or  
otherwise, is granted under any patents, copyrights or other intellectual property  
rights of EliteMT or others.  
Any semiconductor devices may have inherently a certain rate of failure. To  
minimize risks associated with customer's application, adequate design and  
operating safeguards against injury, damage, or loss from such failure, should be  
provided by the customer when making application designs.  
EliteMT's products are not authorized for use in critical applications such as, but not  
limited to, life support devices or system, where failure or abnormal operation may  
directly affect human lives or cause physical injury or property damage. If products  
described here are to be used for such kinds of application, purchaser must do its  
own quality assurance testing appropriate to such applications.  
Elite Memory Technology Inc  
Publication Date: Agu. 2001  
Revision : 1.3 16/16  
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