ESMT
F25L08QA (2S)
INSTRUCTIONS
Instructions are used to Read, Write (Erase and Program), and
configure the F25L08QA. The instruction bus cycles are 8 bits
each for commands (Op Code), data, and addresses. Prior to
executing any Page Program, Write Status Register, Sector
Erase, Block Erase, or Chip Erase instructions, the Write Enable
(WREN) instruction must be executed first. The complete list of
the instructions is provided in Table 5. All instructions are
entered and must be driven high after the last bit of the instruction
has been shifted in (except for Read, Read ID, Read Status
Register, Read Electronic Signature instructions). Any low to high
transition on CE , before receiving the last bit of an instruction
bus cycle, will terminate the instruction in progress and return the
device to the standby mode.
synchronized off a high to low transition of CE . Inputs will be
accepted on the rising edge of SCK starting with the most
Instruction commands (Op Code), addresses, and data are all
input from the most significant bit (MSB) first.
significant bit. CE must be driven low before an instruction is
Table 5: Device Operation Instruction
Bus Cycle 1~3
4
Max.
Freq
Operation
1
2
3
5
6
N
SIN SOUT
SIN
SOUT
SIN
SOUT SIN SOUT SIN SOUT SIN SOUT SIN SOUT
Read
Fast Read
33 MHz 03H Hi-Z A23-A16 Hi-Z
0BH Hi-Z A23-A16 Hi-Z
A15-A8 Hi-Z A7-A0 Hi-Z
A15-A8 Hi-Z A7-A0 Hi-Z
X
X
DOUT0
X
X
X
X
DOUT1
DOUT0
X
X
cont.
cont.
cont.
-
cont.
-
Fast Read Dual Output12,13
Fast Read Dual I/O12, 14
Fast Read Quad
3BH
BBH
A23-A16
A23-A8
A15-A8
A7-A0
DOUT0~1
A7-A0, M7-M0
DOUT0~1
cont.
-
6BH
EBH
A23-A16
A15-A8
A7-A0
X
DOUT0~3
-
-
-
-
Output12, 15
Fast Read Quad I/O12, 16
Sector Erase4 (4K Byte)
Block Erase5 (32K Byte)
Block Erase5 (64K Byte)
A23-A0, M7-M0
X, DOUT0~1
DOUT2~6
cont.
20H Hi-Z A23-A16 Hi-Z
52H Hi-Z A23-A16 Hi-Z
D8H Hi-Z A23-A16 Hi-Z
60H /
A15-A8 Hi-Z A7-A0 Hi-Z
A15-A8 Hi-Z A7-A0 Hi-Z
A15-A8 Hi-Z A7-A0 Hi-Z
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Chip Erase
Hi-Z
-
-
-
-
-
-
-
-
-
-
-
-
C7H
Erase Suspend
Erase Resume
75H
7AH Hi-Z
Hi-Z
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Up to
Page Program (PP)
02H Hi-Z A23-A16 Hi-Z
A15-A8 Hi-Z A7-A0 Hi-Z DIN0 Hi-Z DIN1 Hi-Z 256 Hi-Z
50MHz
~
bytes
Up to 256
Quad Page Program17
Mode Bit Reset 6
Deep Power Down (DP)
Read Status Register-1
(RDSR-1) 7
32H
A23-A16
A15-A8
A7-A0
DIN0~3
DIN4~7
byte
FFH Hi-Z
B9h Hi-Z
FFH
-
Hi-Z
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
DOUT
(S7-S0)
DOUT
(S15-S8)
05H Hi-Z
35H Hi-Z
X
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Read Status Register-2
100MHz
X
-
(RDSR-2) 7
Write Status Register
(WRSR) 10
DIN
(S7-S0)
-
01H Hi-Z
06H Hi-Z
04H Hi-Z
Hi-Z
-
-
-
-
-
-
-.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Write Enable (WREN) 10
Write Disable (WRDI)/ Exit
secured OTP mode
Enter secured OTP mode
(ENSO)
-
-
-
-
-
B1H Hi-Z
ABH Hi-Z
ABH Hi-Z
ABH Hi-Z
ABH Hi-Z
-
-
-
-.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Release from Deep Power
Down (RDP)
-
-
-
-
-
-
Read Electronic Signature
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
13H
33H
73H
(RES) 8
RES in secured OTP mode
& not lock down
RES in secured OTP mode
& lock down
Elite Semiconductor Memory Technology Inc.
Publication Date: Nov. 2013
Revision: 1.2 11/43
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
