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EM42BM3284LBA_09 参数 Datasheet PDF下载

EM42BM3284LBA_09图片预览
型号: EM42BM3284LBA_09
PDF下载: 下载PDF文件 查看货源
内容描述: 1GB ( 8M × 4Bank × 32 ),双倍数据速率SDRAM [1Gb (8M×4Bank×32) Double DATA RATE SDRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 24 页 / 1075 K
品牌: EOREX [ EOREX CORPORATION ]
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eorex  
EM42BM3284LBA  
Recommended DC Operating Conditions  
(VDD=1.8V±0.1V, TA=0°C ~ 70°C)  
Max.  
Symbol  
IDD1  
Parameter  
Test Conditions  
Burst length=2,  
tRCtRC(min.), IOL=0mA,  
One bank active  
Units  
Operating Current (Note 1)  
100  
1.5  
mA  
Precharge Standby Current in  
Power Down Mode  
IDD2P  
mA  
mA  
mA  
mA  
mA  
CKEVIL(max.), tCK=min  
CKEVIL(min.), tCK=min,  
/CSVIH(min.)  
Input signals are changed one time  
during 2 clks  
Precharge Standby Current in  
Non-power Down Mode  
IDD2N  
IDD3P  
IDD3N  
IDD4  
5
Active Standby Current in  
Power Down Mode  
3.5  
10  
CKEVIL(max.), tCK=min  
CKEVIH(min.), tCK=min,  
/CSVIH(min.)  
Input signals are changed one time  
during 2 clks  
Active Standby Current in  
Non-power Down Mode  
Operating Current (Burst  
Mode) (Note 2)  
tCK tCK(min.), IOL=0mA,  
All banks active  
170  
Refresh Current (Note 3)  
IDD5  
IDD6  
110  
1.4  
mA  
mA  
tRCtRFC (min.), All banks active  
CKE0.2V  
Self Refresh Current  
*All voltages referenced to VSS.  
Note 1: IDD1 depends on output loading and cycle rates.  
Specified values are obtained with the output open.  
Input signals are changed only one time during tCK (min.)  
Note 2: IDD4 depends on output loading and cycle rates.  
Specified values are obtained with the output open.  
Input signals are changed only one time during tCK (min.)  
Note 3: Min. of tRFC (Auto refresh Row Cycle Times) is shown at AC Characteristics.  
Recommended DC Operating Conditions (Continued)  
Symbol  
IIL  
Parameter  
Test Conditions  
Min.  
-2  
Typ.  
Max.  
+2  
Units  
0VIVDDQ, VDDQ=VDD  
All other pins not under  
test=0V  
Input Leakage Current  
Output Leakage Current  
uA  
IOL  
VOH  
VOL  
-1.5  
+1.5  
uA  
V
0VOVDDQ, DOUT is disabled  
High Level Output Voltage IO=-0.1mA  
Low Level Output Voltage IO=+0.1mA  
0.9*VDDQ  
0.1*VDDQ  
V
Feb. 2009  
www.eorex.com  
6/24  
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