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EM42BM3284LBA_09 参数 Datasheet PDF下载

EM42BM3284LBA_09图片预览
型号: EM42BM3284LBA_09
PDF下载: 下载PDF文件 查看货源
内容描述: 1GB ( 8M × 4Bank × 32 ),双倍数据速率SDRAM [1Gb (8M×4Bank×32) Double DATA RATE SDRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 24 页 / 1075 K
品牌: EOREX [ EOREX CORPORATION ]
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eorex  
EM42BM3284LBA  
AC Operating Test Characteristics (Continued)  
(VDD=1.8V±0.1V, TA=0°C ~70°C)  
-6  
-75  
Symbol  
Parameter  
Units  
Min.  
0.4  
Max.  
0.6  
Min.  
0.4  
Max.  
0.6  
tRPST  
tRAS  
Read Postamble  
tCK  
ns  
Active to Precharge command  
period  
42  
120k  
45  
120k  
tRC  
tRFC  
tRCD  
tRP  
Active to Active command period  
Auto Refresh Row Cycle Time  
Active to Read or Write delay  
Precharge command period  
60  
75  
ns  
ns  
ns  
ns  
138  
30  
138  
30  
22.5  
22.5  
tRRD  
tCCD  
Active bank A to B command period  
12  
15  
ns  
Column address to column address  
delay  
1
1
tCK  
tCDLR  
tHZP  
tCDLW  
tDPL  
Last data in to Read command  
Pre-charge command to high-Z  
Last data in to Write command  
Last data in to Precharge command  
2.5 tCK- tDQSS  
2.5 tCK- tDQSS  
tCK  
tCK  
3
1
3
3
1
3
tCK  
tCK  
Internal Write to Read command  
delay  
tCK  
tWTR  
tCKE  
tWPD  
2
1
CKE minimum pulse width  
2
2
tCK  
tCK  
Write to pre-charge delay(same  
bank)  
4+  
BL/2  
3+  
BL/2  
Read to pre-charge delay(same  
bank)  
tCK  
tCK  
tRPD  
BL/2  
BL/2  
3+  
BL/2  
2+  
BL/2  
tWRD  
Write to Read command delay  
tBSTW  
tWR  
Burst stop to write delay  
Write recovery  
3
3
tCK  
ns  
15  
15  
Exit self Refresh to non-read  
command  
tXSNR  
120  
120  
ns  
tXSRD  
tREFI  
Exit self Refresh to read command  
Average periodic refresh interval  
200  
7.8  
200  
7.8  
ns  
us  
Feb. 2009  
www.eorex.com  
10/24  
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