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EM42BM3284LBA_09 参数 Datasheet PDF下载

EM42BM3284LBA_09图片预览
型号: EM42BM3284LBA_09
PDF下载: 下载PDF文件 查看货源
内容描述: 1GB ( 8M × 4Bank × 32 ),双倍数据速率SDRAM [1Gb (8M×4Bank×32) Double DATA RATE SDRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 24 页 / 1075 K
品牌: EOREX [ EOREX CORPORATION ]
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eorex  
EM42BM3284LBA  
Absolute Maximum Rating  
Symbol  
Item  
Input, Output Voltage  
Rating  
Units  
V
VIN, VOUT  
VDD, VDDQ  
-0.5 ~ +2.3  
-0.5 ~ +2.3  
Power Supply Voltage  
V
Commercial  
Extended  
0 ~ +70  
-25 ~ +85  
TOP  
Operating Temperature Range  
°C  
TSTG  
PD  
Storage Temperature Range  
Power Dissipation  
-55 ~ +125  
°C  
W
1
IOS  
Short Circuit Current  
50  
mA  
Note: Caution Exposing the device to stress above those listed in Absolute Maximum Ratings could  
cause permanent damage. The device is not meant to be operated under conditions outside the  
limits described in the operational section of this specification. Exposure to Absolute Maximum  
Rating conditions for extended periods may affect device reliability.  
Capacitance (VCC=1.8V ± 0.1V, f=1MHz, TA=25°C)  
Symbol  
CCLK  
Parameter  
Clock Capacitance  
Min.  
1.5  
Typ.  
Max.  
4.0  
Units  
pF  
Input Capacitance for CLK, CKE, Address,  
/CS, /RAS, /CAS, /WE, DQML, DQMU  
CI  
1.5  
2.0  
4.0  
5.0  
pF  
pF  
CO  
Input/Output Capacitance  
Recommended DC Operating Conditions (TA=0°C ~70°C)  
Symbol  
VDD  
Parameter  
Power Supply Voltage  
Min.  
1.7  
Typ.  
1.8  
Max.  
1.9  
Units  
V
VDDQ  
VIH  
Power Supply Voltage (for I/O Buffer)  
Input Logic High Voltage  
1.7  
1.8  
1.9  
V
0.8* VDDQ  
-0.3  
VDDQ+0.3  
0.2*VDDQ  
V
VIL  
Input Logic Low Voltage  
V
Note: * All voltages referred to VSS.  
Feb. 2009  
www.eorex.com  
5/24  
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