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EN29SL800B-90MIP 参数 Datasheet PDF下载

EN29SL800B-90MIP图片预览
型号: EN29SL800B-90MIP
PDF下载: 下载PDF文件 查看货源
内容描述: 8兆位( 1024K ×8位/ 512K ×16位)闪存引导扇区快闪记忆体, CMOS 1.8伏只 [8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 1.8 Volt-only]
分类和应用: 闪存存储内存集成电路
文件页数/大小: 43 页 / 337 K
品牌: EON [ EON SILICON SOLUTION INC. ]
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EN29SL800  
Flowchart 7b. In-System Sector Unprotect Flowchart  
START  
PLSCNT = 1  
Protect all sectors:  
The indicated portion  
of the sector protect  
RESET# = VID  
algorithm must be  
performed for all  
Wait 1 μS  
unprotected sectors  
prior to issuing the  
first sector unprotect  
No  
address (see  
Diagram 7a.)  
Temporary Sector  
Unprotect Mode  
First Write  
Cycle = 60h?  
Yes  
No  
All sectors  
protected?  
Yes  
Set up first sector  
address  
Sector Unprotect: Write 60H to  
sector address with A6 = 1,  
A1 = 1, A0 = 0  
Wait 15 ms  
Verify Sector Unprotect:  
Write 40h to sector address  
with A6 = 1, A1 = 1, A0 =0  
Increment  
PLSCNT  
Wait 0.4 μS  
Read from sector address with  
A6 = 1, A1 = 1, A0 = 0  
No  
No  
PLSCNT =  
1000?  
Set up next sector  
Data = 00h?  
address  
Yes  
Yes  
Sector  
Unprotect  
Algorithm  
No  
Device failed  
Last sector  
verified?  
Yes  
Remove VID from  
RESET#  
Write reset  
command  
Sector Unprotect  
complete  
This Data Sheet may be revised by subsequent versions  
or modifications due to changes in technical specifications.  
©2004 Eon Silicon Solution, Inc., www.essi.com.tw  
23  
Rev. D, Issue Date: 2006/11/06  
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