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EN29GL064T-70TIP 参数 Datasheet PDF下载

EN29GL064T-70TIP图片预览
型号: EN29GL064T-70TIP
PDF下载: 下载PDF文件 查看货源
内容描述: 64兆位( 8192K ×8位/ 4096K ×16位)闪存 [64 Megabit (8192K x 8-bit / 4096K x 16-bit) Flash Memory]
分类和应用: 闪存
文件页数/大小: 66 页 / 3236 K
品牌: EON [ EON SILICON SOLUTION INC. ]
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Preliminary EN29GL064  
the sector. In summary, if the PPB Lock Bit is locked (set to “0”), no changes to the PPBs are allowed.  
The PPB Lock Bit can only be unlocked (reset to “1”) through a hardware reset or power cycle. See also  
Figure 8 for an overview of the Advanced Sector Protection feature.  
Hardware Data Protection Methods  
The device offers two main types of data protection at the sector level via hardware control:  
When WP#/ACC is at VIL, the either the highest or lowest sector is locked (device specific).  
There are additional methods by which intended or accidental erasure of any sectors can be prevented  
via hardware means. The following subsections describes these methods:  
WP#/ACC Method  
The Write Protect feature provides a hardware method of protecting one outermost sector. This function  
is provided by the WP#/ACC pin and overrides the previously discussed Sector Protection/Unprotection  
method.  
If the system asserts VIL on the WP#/ACC pin, the device disables program and erase functions in the  
highest or lowest sector independently of whether the sector was protected or unprotected using the  
method described in Advanced Sector Protection/Unprotection on page 26.  
If the system asserts VIH on the WP#/ACC pin, the device reverts to whether the boot sectors were last  
set to be protected or unprotected. That is, sector protection or unprotection for these sectors depends  
on whether they were last protected or unprotected.  
The WP#/ACC pin must be held stable during a command sequence execution. WP# has an internal  
pull-up; when unconnected, WP# is set at VIH.  
Note  
If WP#/ACC is at VIL when the device is in the standby mode, the maximum input load current is  
increased.  
Low VCC Write Inhibit  
When VCC is less than VLKO, the device does not accept any write cycles. This protects data during  
VCC power-up and power-down.  
The command register and all internal program/erase circuits are disabled, and the device resets to  
reading array data. Subsequent writes are ignored until VCC is greater than VLKO. The system must  
provide the proper signals to the control inputs to prevent unintentional writes when VCC is greater than  
VLKO.  
Write Pulse “Glitch Protection”  
Noise pulses of less than 5 ns (typical) on OE#, CE# or WE# do not initiate a write cycle.  
Power-Up Write Inhibit  
If WE# = CE# = RESET# = VIL and OE# = VIH during power up, the device does not accept commands  
on the rising edge of WE#. The internal state machine is automatically reset to the read mode on power-  
up.  
This Data Sheet may be revised by subsequent versions  
or modifications due to changes in technical specifications.  
©2004 Eon Silicon Solution, Inc., www.eonssi.com  
38  
Rev. A, Issue Date: 2009/3/20  
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