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EN29GL064T-70TIP 参数 Datasheet PDF下载

EN29GL064T-70TIP图片预览
型号: EN29GL064T-70TIP
PDF下载: 下载PDF文件 查看货源
内容描述: 64兆位( 8192K ×8位/ 4096K ×16位)闪存 [64 Megabit (8192K x 8-bit / 4096K x 16-bit) Flash Memory]
分类和应用: 闪存
文件页数/大小: 66 页 / 3236 K
品牌: EON [ EON SILICON SOLUTION INC. ]
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Preliminary EN29GL064  
Table 10. CFI Query Identification String  
Addresses  
(Word Mode)  
Data  
Description  
10h  
11h  
12h  
13h  
14h  
15h  
16h  
17h  
18h  
19h  
1Ah  
0051h  
0052h Query Unique ASCII string “QRY”  
0059h  
0002h  
Primary OEM Command Set  
0000h  
0040h  
Address for Primary Extended Table  
0000h  
0000h  
Alternate OEM Command set (00h = none exists)  
0000h  
0000h  
0000h  
Address for Alternate OEM Extended Table (00h = none exists)  
Table 11. System Interface String  
Addresses  
(Word Mode)  
Data  
Description  
Vcc Min (write/erase)  
DQ7-DQ4: volt, DQ3-DQ0: 100mV  
1Bh  
0027h  
Vcc Max (write/erase)  
DQ7-DQ4: volt, DQ3-DQ0: 100mV  
1Ch  
0036h  
1Dh  
1Eh  
1Fh  
20h  
21h  
22h  
23h  
24h  
25h  
26h  
0000h Vpp Min voltage (00h = no Vpp pin present)  
0000h Vpp Max voltage (00h = no Vpp pin present)  
0003h Typical timeout per single byte/word write 2N µs  
0004h Typical timeout for min size buffer write 2N µs (00h = not supported)  
0009h Typical timeout per individual block erase 2N ms  
0000h Typical timeout for full chip erase 2N ms (00h = not supported)  
0005h Max timeout for byte/word write 2N times typical  
0005h Max timeout for buffer write 2N times typical  
0004h Max timeout per individual block erase 2N times typical  
0000h Max timeout for full chip erase 2N times typical (00h = not supported)  
Table 12. Device Geometry Definition  
Addresses  
(Word mode)  
Data  
Description  
27h  
28h  
29h  
2Ah  
2Bh  
0017h  
0002h  
0000h  
0005h  
0000h  
Device Size = 2N bytes. 2**23=8MB=64Mb  
Flash Device Interface Description (refer to CFI publication 100);  
01h = X16 only; 02h = x8/x16  
Max number of byte in multi-byte write = 2N  
(00h = not supported)  
Number of Erase Block Regions within device (01h = uniform device,  
02h = boot device)  
2Ch  
00xxh  
2Dh  
2Eh  
2Fh  
30h  
00xxh  
0000h  
00x0h  
000xh  
Erase Block Region 1 Information  
(refer to the CFI specification of CFI publication 100)  
EN29GL064 H and L : 007Fh, 0000h, 0000h, 0001h  
EN29GL064 B and T : 0007h, 0000h, 0020h, 0000h  
31h  
32h  
33h  
34h  
00xxh  
0000h  
0000h  
000xh  
Erase Block Region 2 Information  
(refer to the CFI specification of CFI publication 100)  
EN29GL064 H and L : 0000h, 0000h, 0000h, 0000h  
EN29GL064 B and T : 007Eh, 0000h, 0000h, 0001h  
35h  
36h  
37h  
38h  
0000h  
0000h  
0000h  
0000h  
Erase Block Region 3 Information  
(refer to the CFI specification of CFI publication 100)  
This Data Sheet may be revised by subsequent versions  
or modifications due to changes in technical specifications.  
©2004 Eon Silicon Solution, Inc., www.eonssi.com  
42  
Rev. A, Issue Date: 2009/3/20  
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