EN29F010
Table 10. AC CHARACTERISTICS
Write (Erase/Program) Operations
Alternate CE Controlled Writes
Parameter
Symbols
Speed Options
JEDEC
Standard
Description
-45
-55
-70
-90
Unit
Min
Min
Min
Min
Min
45
55
70
90
ns
Write Cycle Time
tAVAV
tWC
0
35
20
0
0
45
25
0
0
45
30
0
0
45
45
0
ns
ns
ns
ns
Address Setup Time
Address Hold Time
Data Setup Time
tAVEL
tELAX
tDVEH
tEHDX
tAS
tAH
tDS
tDH
tOES
Data Hold Time
Min
Min
Min
0
0
0
0
0
0
0
0
ns
ns
ns
Output Enable Setup Time
Output
Enable
Read
Toggle and
Data Polling
tOEH
10
10
10
10
Hold Time
Read Recovery Time before
Min
0
0
0
0
ns
tGHEL
tGHEL
Write (
High to
Low)
CE
OE
Min
Min
Min
Min
Typ
Max
Typ
Max
Typ
Max
Min
0
0
0
0
0
0
0
0
ns
ns
ns
ns
µs
µs
s
tWLEL
tEHWH
tELEH
tEHEL
tWS
tWH
tCP
SetupTime
Hold Time
W E
W E
25
20
7
30
20
7
35
20
7
45
20
7
Write Pulse Width
tCPH
Write Pulse Width High
tWHWH
tWHWH1
tWHWH2
tWHWH3
Programming Operation
1
200
0.3
5
200
0.3
5
200
0.3
5
200
0.3
5
tWHWH
Sector Erase Operation
2
s
3
3
3
3
s
tWHWH
Chip Erase Operation
Vcc Setup Time
3
35
50
35
50
35
50
35
50
s
µs
tVCS
Min
500
500
500
500
ns
tVIDR
Rise Time to V
ID
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
©2003 Eon Silicon Solution, Inc., www.essi.com.tw
24
Rev. A, Issue Date: 2003/10/20
EON [ EON SILICON SOLUTION INC. ]
