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EN29F010-70SIP 参数 Datasheet PDF下载

EN29F010-70SIP图片预览
型号: EN29F010-70SIP
PDF下载: 下载PDF文件 查看货源
内容描述: 1兆位( 128K ×8位), 5V闪存 [1 Megabit (128K x 8-bit) 5V Flash Memory]
分类和应用: 闪存存储内存集成电路光电二极管
文件页数/大小: 35 页 / 428 K
品牌: EON [ EON SILICON SOLUTION INC. ]
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EN29F010  
Table 8. AC CHARACTERISTICS  
Read-only Operations Characteristics  
Parameter  
Symbols  
Speed Options  
JEDEC  
Standard  
-45  
-55  
-70  
-90  
90  
Unit  
Description  
Test Setup  
Min  
45  
55  
70  
ns  
tAVAV  
tRC  
Read Cycle Time  
= V  
= V  
CE  
OE  
IL  
Max  
45  
55  
70  
90  
ns  
Address to Output Delay  
tAVQV  
tACC  
IL  
IL  
Max  
Max  
Max  
Max  
45  
25  
10  
10  
55  
30  
15  
15  
70  
30  
20  
20  
90  
35  
20  
20  
ns  
ns  
ns  
ns  
tELQV  
tGLQV  
tEHQZ  
tGHQZ  
tCE  
tOE  
tDF  
tDF  
Chip Enable To Output Delay  
Output Enable to Output Delay  
Chip Enable to Output High Z  
= V  
OE  
Output Enable to Output High Z  
Output Hold Time from  
Min  
0
0
0
0
ns  
tAXQX  
tOH  
Addresses,  
or ,  
CE OE  
whichever occurs first  
Notes:  
For -45, -55  
Vcc = 5.0V ± 5%  
Output Load : 1 TTL gate and 30pF  
Input Rise and Fall Times: 5ns  
Input Rise Levels: 0.0 V to 3.0 V  
Timing Measurement Reference Level, Input and Output: 1.5 V  
For all others:  
Vcc = 5.0V ± 10%  
Output Load: 1 TTL gate and 100 pF  
Input Rise and Fall Times: 20 ns  
Input Pulse Levels: 0.45 V to 2.4 V  
Timing Measurement Reference Level, Input and Output: 0.8 V and 2.0 V  
This Data Sheet may be revised by subsequent versions  
or modifications due to changes in technical specifications.  
©2003 Eon Silicon Solution, Inc., www.essi.com.tw  
22  
Rev. A, Issue Date: 2003/10/20  
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