EN29F010
Table 7. DC Characteristics
(Ta = 0°C to 70°C or - 40°C to 85°C; VCC = 5.0V ± 10%)
Symbol
Parameter
Input Leakage Current
Output Leakage Current
Test Conditions
0V≤ V ≤ Vcc
Min
Max
±5
Unit
µA
I
LI
IN
±5
µA
I
0V≤ V
≤ Vcc
LO
OUT
= V ;
= V
;
IH
CE
OE
IL
f = 6MHz
Supply Current (read) TTL Byte
30
mA
I
CC1
Supply Current (Standby) TTL
Supply Current (Standby) CMOS
1.0
5.0
MA
µA
I
I
= V
CE
CE
CC2
CC3
IH
= Vcc ± 0.3V
Byte program, Sector or Chip
Erase in progress
mA
V
I
CC4
Supply Current (Program or Erase)
Input Low Voltage
30
-0.5
2
0.8
V
IL
Vcc +
Input High Voltage
V
V
IH
0.5
Output Low Voltage
0.45
V
V
V
I
= 2 mA
OL
OL
Output High Voltage TTL
2.4
V
I
I
= -2.5 mA
OH
OH
Vcc -
Output High Voltage CMOS
V
= -100 µA
OH
0.4V
A9 Voltage (Electronic Signature)
A9 Current (Electronic Signature)
10.5
3.2
11.5
100
V
V
ID
A9 = VID
µA
I
LIT
Supply voltage (Erase and
V
LKO
4.2
V
Program lock-out)
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
©2003 Eon Silicon Solution, Inc., www.essi.com.tw
21
Rev. A, Issue Date: 2003/10/20
EON [ EON SILICON SOLUTION INC. ]
