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EN29F002AT-70JI 参数 Datasheet PDF下载

EN29F002AT-70JI图片预览
型号: EN29F002AT-70JI
PDF下载: 下载PDF文件 查看货源
内容描述: 2兆位( 256K ×8位)快闪记忆体 [2 Megabit (256K x 8-bit) Flash Memory]
分类和应用: 闪存存储内存集成电路
文件页数/大小: 35 页 / 430 K
品牌: EON [ EON SILICON SOLUTION INC. ]
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EN29F002A / EN29F002AN  
the Device Code can be read as 7F, 92 (hex) for EN29F002AT or as 7F, 97 (hex) for EN29F002AB  
(See Table 4). All identifiers for manufacturer and device codes possess odd parity with the DQ7  
defined as the parity bit.  
Write Mode  
Write is used for device programming and erase through the command register. This mode is  
selected with  
=
= L and  
= H. The contents of the command register are the inputs to  
OE  
CE  
W E  
the internal state machine. The command register is a set of latches used to store the commands  
along with the addresses and data information needed to execute that command. Address latching  
occurs on the falling edge of  
rising edge of  
or  
(whichever occurs later) and data latching occurs on the  
CE  
W E  
(whichever occurs first).  
or  
CE  
W E  
Temporary Sector Unprotect Mode  
EN29F002A allows protected sectors to be temporarily unprotected for making changes to data  
stored in a protected sector in system (n/a for EN29F002AN). To activate the temporary sector  
unprotect, the  
pin must be set to a high voltage of VID (11V). In this mode, protected sectors  
RESET  
can be programmed or erased by selecting the sector addresses. Once the high voltage, VID, is  
removed from pin, all previously protected sectors will revert to their protected state.  
RESET  
RESET Hardware Reset Mode (not available on EN29F002AN)  
Resetting the EN29F002A device is performed when the  
pin is set to VIL and kept low for at  
RESET  
least 500ns. The internal state machine will be reset to the read mode. Any program/erase  
operation in progress during hardware reset will be terminated and data may be corrupted.  
If the  
pin is tied to the system reset command, the device will be automatically reset to the  
RESET  
read mode and enable the system’s microprocessor to read the boot-up firmware from the FLASH  
memory.  
COMMAND DEFINITIONS  
The operations of the EN29F002A are selected by one or more commands written into the  
command register to perform Read/Reset Memory, Read ID, Read Sector Protection, Program,  
Sector Erase, Chip Erase, Erase Suspend and Erase Resume. Commands are made up of data  
sequences written at specific addresses via the command register. The sequences for the  
specified operation are defined in the Command Table (Table 5). Incorrect addresses, incorrect  
data values or improper sequences will reset the device to the read mode.  
This Data Sheet may be revised by subsequent versions  
©2003 Eon Silicon Solution, Inc., www.essi.com.tw  
Rev. A, Issue Date: 2003/03/26  
7
or modifications due to changes in technical specifications.  
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