EM25LV010
1 Megabit (128K x 8) Serial Flash Memory
SPECIFICATION
Test Conditions Specified in Table 10 and Table 11
Parameter Min Type Max
Symbol
Alt.
Unit
Clock frequency for the following instructions:
FAST_READ, PP, SE, BE, DP, RES, RDID,
WREN, WRDI, RDSR, WRSR
fC
fC
D.C.
33
20
MHZ
fR
Clock frequency for READ instructions
Clock High Time
D.C.
18
18
0.1
10
10
5
MHZ
ns
ns
V/ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
1
tCH
tCLH
tCLL
1
tCL
Clock Low Time
Clock Slew Rate2 (peak to peak)
S# Active Setup Time (relative to C)
S# Not Active Hold Time (relative to C)
Data in Setup Time
tSLCH
tCHSL
tDVCH
tCHDX
tCHSH
tSHCH
tSHSL
tCSS
tDSU
tDH
Data in Hold Time
5
S# Active Hold Time (relative to C)
S# Not Active Setup Time (relative to C)
S# Deselect Time
10
10
100
tCSH
tDIS
tV
2
tSHQZ
Output Disable Time
15
15
tCLQV
tCLQX
tHLCH
tCHHH
tHHCH
tCHHL
Clock Low to Output Valid
Output Hold Time
tHO
0
Hold# Setup Time (relative to C)
Hold# Hold Time (relative to C)
Hold Setup Time (relative to C)
Hold Hold Time ((relative to C)
Hold to Output Low-Z
10
10
10
10
2
tHHQX
tLZ
15
20
3
2
tHLQZ
tHZ
Hold# to Output High-Z
2
tDP
S# High to Deep Power-down Mode
S# High to Standby Mode without Electronic
Signature Read
2
tRES1
3
µs
µs
S# High to Standby Mode with Electronic
Signature Read
2
tRES2
1.8
tW
Write Status Register Cycle Time
Page Program Cycle Time
Block Erase Cycle Time
3
2
15
5
ms
ms
ms
ms
tPP
tBE
tCE
40
40
60
60
Chip Erase Cycle Time
Table 14: AC Characteristics
This specification is subject to change without further notice. (11.08.2004 V1.0)
Page 22 of 30
ELAN [ ELAN MICROELECTRONICS CORP ]
